V. B. Shuman

TL;DR: The variation of the optical characteristics of thin films of oxidized porous silicon as a function of the preparation regime and subsequent heat treatment is investigated by ellipsometry as mentioned in this paper, where it is shown that the refractive index, optical thickness, and extinction coefficient of porous silicon films decrease monotonically, but the film thickness increases as the degree of oxidation of the silicon base layer increases.

TL;DR: The structure of porous silicon carbide has been studied using transmission electron microscopy both in planar geometry and in a cross-section of a porous film Peculiar structures in the form of shared rosettes with petals of about 3-8 m in size and a density of were found in the subsurface layer These formations are pierced by thin channels (pores) with an average diameter of 10 nm Near the surface of the layer the channels in the ''lobes' may be directed at small angles to the surface, but, with increasing depth, all of

TL;DR: In this article, the content of one and two-atom sulfur-related deep donors in the semiconductor can be quantitatively controlled by varying the diffusant vapor pressure, which can be used to measure the amount of sulfur in the donor.

TL;DR: In this paper, high field magnetoabsorption spectroscopy on silicon doped with a variety of single and double donor species was performed to determine the limits of validity for the standard one-band anisotropic effective mass model.

TL;DR: In this paper, a sandwich diffusion technique was used to determine the temperature dependence of the diffusion coefficient in the dislocation-free silicon in the range of 1000-1200 8C, when the data obtained earlier for the lower temperatures were taken into consideration.