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Yann-Michel Niquet
Researcher at University of Grenoble
Publications - 240
Citations - 6920
Yann-Michel Niquet is an academic researcher from University of Grenoble. The author has contributed to research in topics: Nanowire & Quantum dot. The author has an hindex of 41, co-authored 223 publications receiving 6128 citations. Previous affiliations of Yann-Michel Niquet include STMicroelectronics & Commissariat à l'énergie atomique et aux énergies alternatives.
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Charge transport in chemically doped 2D graphene.
TL;DR: A numerical study of electronic transport in chemically doped 2D graphene materials shows electron-hole mobilities and conductivities are shown to become asymmetric with respect to the Dirac point, preserving therefore remarkable transport properties, even down to the zero temperature limit.
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Quantum confinement in germanium nanocrystals
TL;DR: In this article, the electronic structure of Ge nanocrystals using a sp3 tight binding description is studied and analytical laws for the confinement energies, valid over the whole range of sizes, are derived.
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Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
TL;DR: In this paper, the electronic states of donor and acceptor impurities in nanowires are calculated and the ionization energy of the impurities is strongly enhanced with respect to the bulk when the wires are embedded in a material with a low dielectric constant.
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Describing static correlation in bond dissociation by Kohn–Sham density functional theory
TL;DR: It is shown that density functional theory within the RPA (random phase approximation for the exchange-correlation energy) provides a correct description of bond dissociation in H(2) in a spin-restricted Kohn-Sham formalism, i.e., without artificial symmetry breaking.
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Electronic structure of semiconductor nanowires
Yann-Michel Niquet,Aurélien Lherbier,Nguyen Hong Quang,Marivi Fernandez-Serra,Xavier Blase,Christophe Delerue +5 more
TL;DR: In this article, the authors compute the subband structure of several group IV and III-V 001-, 110-, and 111-oriented nanowires using sp 3 and sp 3 d 5 s * tight-binding models.