Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The p...

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Luminescence properties of defects in GaN

In this review, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed. Among semiconductors, GaN is unique; most of its applications uses thin GaN films deposited on foreign substrates (materials other than GaN); that is, heteroepitaxial thin films. As a consequence of heteroepitaxy, the quality of the GaN films is very dependent on the properties of the substrate—both the inherent properties such as lattice constants and thermal expansion coefficients, and process induced properties such as surface roughness, step height and terrace width, and wetting behavior. The consequences of heteroepitaxy are discussed, including the crystallographic orientation and polarity, surface morphology, and inherent and thermally induced stress in the GaN films. Defects such as threading dislocations, inversion domains, and the unintentional incorporation of impurities into the epitaxial GaN layer resulting from heteroepitaxy are presented along with their effect on device processing and performance. A summary of the structure and lattice constants for many semiconductors, metals, metal nitrides, and oxides used or considered for GaN epitaxy is presented. The properties, synthesis, advantages and disadvantages of the six most commonly employed substrates (sapphire, 6H-SiC, Si, GaAs, LiGaO 2 , and AlN) are presented. Useful substrate properties such as lattice constants, defect densities, elastic moduli, thermal expansion coefficients, thermal conductivities, etching characteristics, and reactivities under deposition conditions are presented. Efforts to reduce the defect densities and to optimize the electrical and optical properties of the GaN epitaxial film by substrate etching, nitridation, and slight misorientation from the (0 0 0 1) crystal plane are reviewed. The requirements, the obstacles, and the results to date to produce zincblende GaN on 3C-SiC/Si(0 0 1) and GaAs are discussed. Tables summarizing measures of the GaN quality such as XRD rocking curve FWHM, photoluminescence peak position and FWHM, and electron mobilities for GaN epitaxial layers produced by MOCVD, MBE, and HVPE for each substrate are given. The initial results using GaN substrates, prepared as bulk crystals and as free-standing epitaxial films, are reviewed. Finally, the promise and the directions of research on new potential substrates, such as compliant and porous substrates are described.

Substrates for gallium nitride epitaxy

The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical etching in molten salts. The mechanism of each etching process is discussed. Etching parameters leading to highly anisotropic etching, dopant-type/bandgap selective etching, defect-selective etching, as well as isotropic etching are discussed. The etch pit shapes and their origins are discussed. The applications of wet etching techniques to characterize crystal polarity and defect density/distribution are reviewed. Additional applications of wet etching for device fabrication, such as producing crystallographic etch profiles, are also reviewed.

Wet etching of GaN, AlN, and SiC : a review

Second-harmonic generation (SHG) in magnetically ordered crystals is reviewed. The symmetry of such crystals is determined by the arrangement of both the charges and the spins, so their contributions to the crystallographic and the magnetic structures, respectively, must be distinguished. Magnetic SHG is introduced as a probe for magnetic structures and sublattice interactions. The specific degrees of optical experiments - including spectral, spatial, and temporal resolution - lead to the observation of novel physical effects that cannot be revealed by other techniques of probing magnetism. These include local or hidden phase transitions, interacting magnetized and polarized sublattices and domain walls, and magnetic interfaces. SHG in various centrosymmetric and noncentrosymmetric crystal classes of antiferromagnetic oxides such as Cr2O3, hexagonal RMnO3(R=Sc,Y,In,Ho-Lu), magnetic garnet films, CuB2O4, CoO, and NiO, is discussed.

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Second-harmonic generation as a tool for studying electronic and magnetic structures of crystals: review

In this paper we outline a new direction in the area of photonic crystals (PCs), or photonic band gap materials, i.e. one-, two-, or three-dimensional superstructures with periods that are comparable with the wavelengths of electromagnetic radiation. The main (and principal) characteristic of this new class of PCs is the presence of magnetically ordered components (or external magnetic field). The linear and nonlinear optical properties of such magnetic PCs are discussed.

Magnetic photonic crystals

We report the development of a new magnetic imaging technique: nonlinear magneto-optical microscopy Magnetization induced second harmonic generation (MSHG) is used to image the domain structure in ultrathin CoNi/Pt films Due to both very high magneto-optical contrast and enhanced interface sensitivity, fine details of magne-tization reversal on CoNi/Pt interfaces become visible with the MSHG imaging that are not detectable by usual magneto-optics The problem of separating the images from different multilayer interfaces is discussed

Nonlinear Magneto-Optical Microscopy

Silicon doped layers GaN were grown with MOCVD on sapphire substrates using silane as silicon precursor. The influence of the silicon doping concentration on the physical and optical properties is investigated. A linear relationship is found between the silane-input molfraction and the free carrier concentration in the GaN layers. The morphology of the samples is drastically changed at high silicon concentrations. Photoluminescence was used to probe bandgap variations as function of the silicon concentration. Increasing of the doping concentration led to a continuous shift of the exciton related PL to lower energies, while the intensity of the UV emission was found to increase up to a carrier concentration of n = 2.5 x 10{sup 18} cm{sup {minus}3}.

V. Kirilyuk

Papers

Nonlinear Magneto-Optical Microscopy

Physical properties of silicon doped hetero-epitaxial MOCVD grown GaN: Influence of doping level and stress[Metal Organic Chemical Vapor Deposition]