V
V. Kirilyuk
Researcher at Radboud University Nijmegen
Publications - 27
Citations - 418
V. Kirilyuk is an academic researcher from Radboud University Nijmegen. The author has contributed to research in topics: Photoluminescence & Epitaxy. The author has an hindex of 10, co-authored 27 publications receiving 408 citations.
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Nonlinear magneto-optical imaging of interface magnetic structures
TL;DR: In this paper, a nonlinear magneto-optical microscopy (NOMO-MOC) technique was proposed to image the domain structure in ultrathin Pt/CoNi/Pt and Au/Co/Au/Fe/GaAs films.
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Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates
V. Kirilyuk,A.R.A. Zauner,Pcm Christianen,Jan L. Weyher,Jan L. Weyher,P.R. Hageman,P.K. Larsen +6 more
TL;DR: In this paper, a photoluminescence (PL) study of homoepitaxial N-polar GaN films grown by metal-organic chemical vapour deposition on vicinal (0 0 0 1 ) GaN single crystal substrates was investigated.
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Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy
V. Kirilyuk,P.R. Hageman,Peter C. M. Christianen,W.H.M. Corbeek,Marcin Zielinski,L. Macht,Jan L. Weyher,P.K. Larsen +7 more
TL;DR: In this paper, the acceptor levels are assigned to intrinsic defects originating from the substrate/layer interface and decreasing in density with the thickness of the film, which is independent of the impurity concentrations, as measured by secondary ion mass spectrometry, and the dislocation densities, obtained by photoenhanced chemical etching.
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Improvement of the optical and structural properties of MOCVD grown GaN on sapphire by an in-situ SiN treatment
P.R. Hageman,Soufien Haffouz,V. Kirilyuk,L. Macht,Jan L. Weyher,A.P. Grzegorczyk,P.K. Larsen +6 more
TL;DR: In this article, a study on the material properties of GaN films on sapphire substrates grown by low-pressure metalorganic vapor phase epitaxy using selective GaN islands as buffer layer is presented.
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Homo-epitaxial growth on misoriented GaN substrates by MOCVD
A.R.A. Zauner,John J. Schermer,W.J.P. Van Enckevort,V. Kirilyuk,Jan L. Weyher,Jan L. Weyher,Izabella Grzegory,P.R. Hageman,P.K. Larsen +8 more
TL;DR: In this paper, the N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° were used as a substrate for homo-epitaxial MOCVD growth.