V. N. Jmerik

TL;DR: It is shown by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than the currently accepted 0.7 eV.

TL;DR: Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation.

TL;DR: In this paper, an AlGaN multiple-quantum-well separate confinement laser heterostructures were constructed by plasma-assisted molecular-beam epitaxy directly on c-sapphire at low temperatures.

TL;DR: In this paper, the growth conditions of AlN nucleation layers with suppressed generation of threading dislocations (TDs), 2-µm thick AlN buffer layers with atomically smooth droplet-free morphology, cladding and waveguide AlGaN layers also possessing the accurate established phase diagram of metal(Ga)-rich growth conditions within the temperature range 660-780 °C.

TL;DR: In this paper, the growth conditions of InN/Al2O3 (0 0 0 0 1) epilayers grown by plasma-assisted molecular beam epitaxy (MBE), their optical properties in the IR range, and the In clustering in the layers were investigated.