V
V.N. Mordkovich
Researcher at Russian Academy of Sciences
Publications - 34
Citations - 136
V.N. Mordkovich is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Silicon & Ion implantation. The author has an hindex of 7, co-authored 34 publications receiving 129 citations.
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Enhanced solid phase epitaxial recrystallization of amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealing
TL;DR: In this article, the mutual influence of solid phase epitaxial regrowth and the process of silicide precipitation in silicon is reported, where a significant enhancement of SPER in the amorphous layer produced by Ni+ ions compared to that produced by Ge+ ions with equal radiation damage is observed.
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Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon
A.B. Danilin,K.A. Drakin,V.V. Kukin,A.A. Malinin,V.N. Mordkovich,A.F. Petrov,V.V. Saraykin,O.I. Vyletalina +7 more
TL;DR: The synthesis of silicon oxynitride buried layers, using the sequential implantation of substoichiometric doses of oxygen and nitrogen ions, has been studied by using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and infrared transmission spectroscopic analysis as mentioned in this paper.
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A model of ion synthesis of buried dielectric layers in silicon
TL;DR: In this paper, an analytical model is developed to describe heterogeneous ion synthesis of chemical phases when annealing silicon bombarded by substoichiometric ion doses, where the phases grow due to segregation of impurities from the target matrix at the surface of the nuclei emerging as a result of the implantation.
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Athermal nature of impact exerted by ultraviolet radiation on the accumulation of radiation defects during ion implantation into silicon
TL;DR: In this article, the effect of UV irradiation during ion implantation on the reordering of defects observed on Soviet grown Czochralski silicon was repeated with Ar + implantation.
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Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures
TL;DR: In this paper, specific features of formation of radiation defects in thin silicon layer of silicon-on-insulator (SOI) structures have been studied, and it is shown that there are differences between variations in the structural and electrical properties of the thin silicon layers and those in bulk silicon crystals (with similar electrical characteristics) subjected to the same radiation effect.