Journal ArticleDOI
Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon
A.B. Danilin,K.A. Drakin,V.V. Kukin,A.A. Malinin,V.N. Mordkovich,A.F. Petrov,V.V. Saraykin,O.I. Vyletalina +7 more
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The synthesis of silicon oxynitride buried layers, using the sequential implantation of substoichiometric doses of oxygen and nitrogen ions, has been studied by using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and infrared transmission spectroscopic analysis as mentioned in this paper.Abstract:
The synthesis of silicon oxynitride buried layers, using the sequential implantation of substoichiometric doses of oxygen and nitrogen ions, has been studied. By using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and infrared transmission spectroscopy we have shown that there is an interrelation between the structure of synthesized layer and the oxygen to nitrogen dose ratio. It has been found that for the chosen implantation and annealing regimes the synthesized structure: consists of buried dielectric, structurally dense, layers which have thicknesses of between 0.12 and 0.185 μm. When the nitrogen to oxygen dose ratio is 3.5, the whole buried layer is amorphous and the interfaces of the buried layer are perfect.read more
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Radiation defect engineering
Kozlovski Vitali,Abrosimova Vera +1 more
TL;DR: In this paper, the authors discuss the role of ion-stimulated processes in Doping of Semiconductors by Charged Particles by using Radiation Defects and Formation of Buried Porous and Damaged Layers.
Journal ArticleDOI
Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour
TL;DR: In this article, single crystal n-type silicon samples were implanted at room temperature sequentially by molecular oxygen (16O2+) and nitrogen (14N2+) in different proportions to high fluence levels ranging from 5.5 to 1.8 ions cm−2 to synthesize silicon oxynitride layers.
Journal ArticleDOI
Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures
TL;DR: In this article, the identification of structures and defects in the ion beam synthesized buried layers were carried out by FTIR, XRD and ESR measurements before and after RTA treatments at different temperatures in nitrogen ambient.
Journal ArticleDOI
Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantation
TL;DR: In this paper, the structure of silicon oxynitride (Si x O y N z ) buried layers were analyzed by FTIR and XRD measurements and the surface modification by using atomic force microscopy (AFM).
Journal ArticleDOI
Formation of silicon on plasma synthesized aluminum nitride structure by ion cutting
TL;DR: In this article, the authors proposed to replace the buried SiO2 layer in SOI with a plasma synthesized AlN thin film to mitigate the self-heating penalty.
References
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Journal ArticleDOI
Ion beam synthesis of thin buried layers of SiO2 in silicon
P.L.F. Hemment,Karen J. Reeson,John A. Kilner,Richard J. Chater,C.D. Marsh,G.R. Booker,George K. Celler,J. Stoemenos +7 more
TL;DR: In this paper, the authors explore the possibility of using ion implantation to form thin (<2000 A) buried layers of stoichiometric SiO2 in single crystal silicon, Silicon (100) wafers have been implanted with O+ ions within the dose range 0.1×1018-1.8 ×1018O+ cm−2 at a particle energy of 200 keV and a substrate temperature of 500°C.
Journal ArticleDOI
Low‐temperature properties and phototransport in silicon‐on‐insulator films synthesized by oxygen implantation
TL;DR: In this article, the conductivity and Hall-effect measurements of silicon-on-insulator material formed by oxygen implantation (SIMOX) were analyzed by comparing conductivity measurements performed at low temperature, under darkness, illumination, and substrate biasing.
Journal ArticleDOI
Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon
TL;DR: In this article, a number of experiments on heterogeneous ion synthesis by substoichiometric implantation closes has been performed, and it is shown that implantation results on the formation of a dielectric phase of complex composition.
Journal ArticleDOI
Diffusion inhibition against gold of ion beam synthesized buried silicon nitride layers in silicon
TL;DR: The ability of buried silicon nitride layers, produced by nitrogen implantation into silicon (330 keV, 1.2 × 1018 cm−2), to inhibit the diffusion of gold was tested as discussed by the authors.
Journal ArticleDOI
In-depth spreading resistance characterization of buried insulating layers synthesized by high dose implantation of nitrogen or oxygen ions
TL;DR: In this article, the authors presented several electrical profiles obtained by the spreading resistance technique on bevelled samples which were implanted with high doses of nitrogen or oxygen ions, and the formation of high resistance buried layer was studied by varying experimental parameters such as: the implanted ion (N + or O + ), the total implanted ion dose from 1E17 cm −2 to 2E18 cm−2, the sample temperature during the ion bombardment by varying the current density, the influence of the annealing after the ion implantation (1200°C; 5 h; N2
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