V
V. Rajagopal Reddy
Researcher at Sri Venkateswara University
Publications - 181
Citations - 2802
V. Rajagopal Reddy is an academic researcher from Sri Venkateswara University. The author has contributed to research in topics: Schottky barrier & Schottky diode. The author has an hindex of 25, co-authored 174 publications receiving 2355 citations. Previous affiliations of V. Rajagopal Reddy include University of Mysore & Chonbuk National University.
Papers
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Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
TL;DR: In this article, the effect of polyvinylidene fluoride (PVDF) polymer interlayer on the rectifying junction parameters of Au/n-InP Schottky diode has been investigated using currentvoltage (I-V) and capacitance-voltage measurements at room temperature.
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Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer
V. Rajagopal Reddy,V. Rajagopal Reddy,V. Manjunath,Vallivedu Janardhanam,Yeon-Ho Kil,Chel-Jong Choi +5 more
TL;DR: In this paper, the electrical properties and current transport mechanisms of Au/BaTiO3 (BTO)/n-GaN metal-insulator-semiconductor (MIS) structures have been investigated by currentvoltage (I-V) and capacitance-voltage measurements at room temperature.
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Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0)
TL;DR: In this article, the temperature dependence of the I-V characteristics of the Mo/n-InP Schottky diode have been successfully explained on the basis of thermionic emission (TE) mechanism with Gaussian distribution of barrier heights (SBHs), and the modified Richardson plot has given mean barrier height Φ ¯ b 0 and Richardson constant (A**) as 0.85 eV and 2.54 a
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Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures
TL;DR: In this article, the authors have investigated the currentvoltage and capacitance-voltage characteristics of the MIS Schottky diode and compared with the MS Schotty diode.
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Tetragonal site of transition metal ions doped sodium phosphate glasses
R.V.S.S.N. Ravikumar,V. Rajagopal Reddy,A. V. Chandrasekhar,B. J. Reddy,Y.P. Reddy,Panduranga Rao +5 more
TL;DR: In this article, the results and analysis of the copper doped glass indicate that the copper ions enter the glass matrix as Cu 2+ ions and the ion spectra are characteristic of tetragonally elongated octahedral site.