V
V. Ya. Shur
Researcher at Ural Federal University
Publications - 416
Citations - 5701
V. Ya. Shur is an academic researcher from Ural Federal University. The author has contributed to research in topics: Lithium niobate & Ferroelectricity. The author has an hindex of 34, co-authored 360 publications receiving 4572 citations. Previous affiliations of V. Ya. Shur include Russian Ministry of the Emergency Situations & University of Aveiro.
Papers
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Journal ArticleDOI
Achieve ultrahigh energy storage performance in BaTiO3–Bi(Mg1/2Ti1/2)O3 relaxor ferroelectric ceramics via nano-scale polarization mismatch and reconstruction
Qingyuan Hu,Ye Tian,Qingshan Zhu,Jihong Bian,Li Jin,Hongliang Du,Denis Alikin,V. Ya. Shur,Yujun Feng,Zhuo Xu,Xiaoyong Wei +10 more
TL;DR: In this article, an effective strategy to achieve ultra-high energy storage performance via nano-scale polarization mismatch and reconstruction is proposed, which can be used to design novel high performance dielectric ceramics for future energy storage devices.
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Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors
TL;DR: In this paper, the static conductivity of charged domain walls with different incline angles with respect to the spontaneous polarization vector in the uniaxial ferroelectric semiconductors of $n$ type was numerically calculated using Landau-Ginzburg-Devonshire theory.
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Micro- and nano-domain engineering in lithium niobate
TL;DR: The physical basis of the domain engineering in ferroelectrics and its application to lithium niobate crystals were reviewed in this paper, where the unified kinetic approach to the domain structure evolution in electric field was formulated and its validity for understanding the variety of observed domain evolution scenarios was demonstrated.
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Intermittency, quasiperiodicity and chaos in probe-induced ferroelectric domain switching
Anton V. Ievlev,Stephen Jesse,Anna N. Morozovska,Evgheni Strelcov,Eugene A. Eliseev,Yuriy V. Pershin,Amit Kumar,V. Ya. Shur,Sergei V. Kalinin +8 more
TL;DR: Ferroelectric domain switching on the surface of a lithium niobate thin film can be induced by the tip of a scanning probe microscope, and gives rise to both regular and chaotic spatiotemporal patterns as mentioned in this paper.
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Nanoscale backswitched domain patterning in lithium niobate
V. Ya. Shur,E. L. Rumyantsev,E. V. Nikolaeva,E. I. Shishkin,D. V. Fursov,Robert G. Batchko,L.A. Eyres,Martin M. Fejer,Robert L. Byer +8 more
TL;DR: In this paper, the authors demonstrate a promising method of nanoscale domain engineering, which allows them to fabricate regular nano-scale domain patterns consisting of strictly oriented arrays of nanodomains (diameter down to 30 nm and density up to 100μm−2) in lithium niobate.