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Vadim V. Cherkashin

Researcher at Russian Academy of Sciences

Publications -  22
Citations -  350

Vadim V. Cherkashin is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Laser & Diffraction efficiency. The author has an hindex of 9, co-authored 18 publications receiving 336 citations.

Papers
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Journal ArticleDOI

Polar coordinate laser pattern generator for fabrication of diffractive optical elements with arbitrary structure

TL;DR: A precision laser pattern generator for writing arbitrary diffractive elements was developed and two resistless technologies of writing on chromium and on amorphous silicon films were developed and implemented and limit characteristics were investigated by writing special test structures.
Proceedings ArticleDOI

Processing parameter optimization for thermochemical writing of DOEs on chromium films

TL;DR: In this paper, a focused laser beam was used to write patterns by inducing a thermochemical change in a bare metal film, and the patterns were developed using a single etching step that dissolves the non-exposed metal.
Proceedings ArticleDOI

Polar coordinate laser writing systems: error analysis of fabricated DOEs

TL;DR: In this article, the wavefront aberrations of rotationally symmetric DOEs caused by fabrication errors were measured interferometrically, and the specific error sources for these systems were described and compared with those of X-Y systems.
Proceedings ArticleDOI

Fabrication of gray-scale masks and diffractive optical elements with LDW glass

TL;DR: In this paper, the optimal transmittance range in which track width is not more than 1 micrometers is shown for LDW-glass type I having thinner colored layer.
Journal ArticleDOI

Shack-Hartmann sensor based on a low-aperture off-axis diffraction lens array

TL;DR: In this paper, a Shack-Hartmann type wavefront sensor designed on the basis of a low-aperture off-axis diffraction lens array is described, which is capable of measuring wavefront slopes at array subapertures of size 640×640 µm with an error not exceeding 4.80 arcseconds (0.15 pixel).