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Vadym V. Kulish

Researcher at National University of Singapore

Publications -  32
Citations -  1730

Vadym V. Kulish is an academic researcher from National University of Singapore. The author has contributed to research in topics: Ab initio & Phosphorene. The author has an hindex of 19, co-authored 31 publications receiving 1427 citations. Previous affiliations of Vadym V. Kulish include Institute of High Performance Computing Singapore & Nanyang Technological University.

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Phosphorene as an anode material for Na-ion batteries: a first-principles study

TL;DR: It is found that Na-phosphorene undergoes semiconductor-metal transition at high Na concentration, and monolayer phosphorene is a very promising anode material for Na-ion batteries.
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Adsorption of metal adatoms on single-layer phosphorene

TL;DR: It is demonstrated that phosphorene forms strong bonds with all studied adatoms while still preserving its structural integrity, and the unique combination of high reactivity with good structural stability is very promising for potential applications of phosphorenes.
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Single-layer metal halides MX2 (X = Cl, Br, I): stability and tunable magnetism from first principles and Monte Carlo simulations

TL;DR: In this article, the magnetic properties of 2D metal dihalides are investigated based on first-principles calculations, and it is shown that single-layer dihalide is energetically and dynamically stable and can be exfoliated from their bulk layered forms.
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A computational study of Na behavior on graphene

TL;DR: In this paper, the authors present the first ab initio and molecular dynamics study of Na adsorption and diffusion on ideal graphene that considers Na-Na interaction and dispersion forces.
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A computational study of the insertion of Li, Na, and Mg atoms into Si(111) nanosheets

TL;DR: In this article, the interaction of metal atoms (Li, Na, and Mg) with Si(111) nanosheets of different thicknesses was studied and it was shown that the chemistry of the interactions is sensitive to both the nanosheet thickness and the dopant surface distance.