V
Vedatrayee Chakraborty
Researcher at B. P. Poddar Institute of Management & Technology
Publications - 15
Citations - 97
Vedatrayee Chakraborty is an academic researcher from B. P. Poddar Institute of Management & Technology. The author has contributed to research in topics: Quantum well & Quantum tunnelling. The author has an hindex of 5, co-authored 15 publications receiving 83 citations. Previous affiliations of Vedatrayee Chakraborty include University of Calcutta.
Papers
More filters
Journal ArticleDOI
Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55\,\upmu \mathrm{m}
TL;DR: In this article, the authors proposed a Ge/Ge/Sn/GeSn heterophototransistor (HPT) structure on a Si-platform and calculated the terminal currents, current gain, optical gain and responsivity of the device at $$1.55\,\upmu \mathrm{m}
Proceedings ArticleDOI
Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 µm
TL;DR: In this paper, a thermionic field-diffusion model is employed to calculate the current, optical gain and responsivity of Ge/GeSn/Ge Sn heterophototransistor on Si.
Journal ArticleDOI
Performance prediction of an electroabsorption modulator at 1550 nm using GeSn/SiGeSn Quantum Well structure
TL;DR: In this article, the absorption spectra in strain-free Ge 0.992 Sn 0.008 /Si 0.3 Ge 0.,61 Sn 0.,0.09 Quantum Well structure due to direct gap excitons formed in Ge 0,992 Sn,0.008 wells reported by Chang and Chang are reproduced by an empirical expression.
Journal ArticleDOI
Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor
TL;DR: In this paper, the performance characteristics of strain balanced direct band gap multiple quantum wells (MQWs) hetero phototransistor (HPT) made of SiGeSn/GeSn alloys grown on Si substrate which is compatible with recent CMOS fabrication technology is provided.