In this chapter, we will restrict our attention to the ferrites and a few other closely related materials. The great interest in ferrites stems from their unique combination of a spontaneous magnetization and a high electrical resistivity. The observed magnetization results from the difference in the magnetizations of two non-equivalent sub-lattices of the magnetic ions in the crystal structure. Materials of this type should strictly be designated as “ferrimagnetic” and in some respects are more closely related to anti-ferromagnetic substances than they are to ferromagnetics in which the magnetization results from the parallel alignment of all the magnetic moments present. We shall not adhere to this special nomenclature except to emphasize effects, which are due to the existence of the sub-lattices.

Ferromagnetic materials

Journal of Physics Condensed Matter: Preface

A M was supported by the King Abdullah University of Science and Technology (KAUST) T J acknowledges support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin, and the Grant Agency of the Czech Republic Grant No 19-28375X J S acknowledges the Alexander von Humboldt Foundation, EU FET Open Grant No 766566, EU ERC Synergy Grant No 610115, and the Transregional Collaborative Research Center (SFB/TRR) 173 SPIN+X K G and P G acknowledge stimulating discussions with C O Avci and financial support by the Swiss National Science Foundation (Grants No 200021-153404 and No 200020-172775) and the European Commission under the Seventh Framework Program (spOt project, Grant No 318144) A T acknowledges support by the Agence Nationale de la Recherche, Project No ANR-17-CE24-0025 (TopSky) J Ž acknowledges the Grant Agency of the Czech Republic Grant No 19-18623Y and support from the Institute of Physics of the Czech Academy of Sciences and the Max Planck Society through the Max Planck Partner Group programme

/pdf/current-induced-spin-orbit-torques-in-ferromagnetic-and-3tdt106r3u.pdf

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

https://shell.cas.usf.edu/~phanm//PMS.pdf

Giant magnetoimpedance materials: Fundamentals and applications

Current-induced effective magnetic fields can provide efficient ways of electrically manipulating the magnetization of ultrathin magnetic heterostructures. Two effects, known as the Rashba spin orbit field and the spin Hall spin torque, have been reported to be responsible for the generation of the effective field. However, a quantitative understanding of the effective field, including its direction with respect to the current flow, is lacking. Here we describe vector measurements of the current-induced effective field in Ta|CoFeB|MgO heterostructrures. The effective field exhibits a significant dependence on the Ta and CoFeB layer thicknesses. In particular, a 1 nm thickness variation of the Ta layer can change the magnitude of the effective field by nearly two orders of magnitude. Moreover, its sign changes when the Ta layer thickness is reduced, indicating that there are two competing effects contributing to it. Our results illustrate that the presence of atomically thin metals can profoundly change the landscape for controlling magnetic moments in magnetic heterostructures electrically.

▲Current-induced effective field vector in Ta│CoFeB│MgO

Spin orbit interactions are rapidly emerging as the key for enabling efficient current-controlled spintronic devices. Much work has focused on the role of spin-orbit coupling at heavy metal/ferromagnet interfaces in generating current-induced spin-orbit torques. However, the strong influence of the spin-orbit-derived Dzyaloshinskii-Moriya interaction (DMI) on spin textures in these materials is now becoming apparent. Recent reports suggest DMI-stabilized homochiral domain walls (DWs) can be driven with high efficiency by spin torque from the spin Hall effect. However, the influence of the DMI on the current-induced magnetization switching has not been explored nor is yet well-understood, due in part to the difficulty of disentangling spin torques and spin textures in nano-sized confined samples. Here we study the magnetization reversal of perpendicular magnetized ultrathin dots and show that the switching mechanism is strongly influenced by the DMI, which promotes a universal chiral non-uniform reversal, even for small samples at the nanoscale. We show that ultrafast current-induced and field-induced magnetization switching consists on local magnetization reversal with domain wall nucleation followed by its propagation along the sample. These findings, not seen in conventional materials, provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.

/pdf/universal-chiral-triggered-magnetization-switching-in-67wah2hyt7.pdf

Universal chiral-triggered magnetization switching in confined nanodots

Magnetic domain wall (DW) motion induced by a localized Gaussian temperature profile is studied in a Permalloy nanostrip within the framework of the stochastic Landau-Lifshitz-Bloch equation. The different contributions to thermally induced DW motion, entropic torque and magnonic spin transfer torque, are isolated and compared. The analysis of magnonic spin transfer torque includes a description of thermally excited magnons in the sample. A third driving force due to a thermally induced dipolar field is found and described. Finally, thermally induced DW motion is studied under realistic conditions by taking into account the edge roughness. The results give quantitative insights into the different mechanisms responsible for domain wall motion in temperature gradients and allow for comparison with experimental results.

/pdf/domain-wall-motion-by-localized-temperature-gradients-3ma69pk67v.pdf

Domain wall motion by localized temperature gradients

Micromagnetic simulations are used to investigate the motion of magnetic skyrmions in an in-plane strain gradient. The skyrmion diameter and energy are found to depend on the strain, which leads to a force that moves the skyrmion toward regions with higher strain. An analytical expression for the skyrmion velocity as a function of the strain gradient is derived assuming a rigid profile for the skyrmion, and good agreement with simulations is obtained. Furthermore, electromechanical simulations of a hybrid ferromagnetic/piezoelectric device show that the in-plane strain gradients needed to move skyrmions can be achieved by applying moderate voltages in the piezoelectric substrate, which offers an original way to control skyrmion motion efficiently.

Skyrmion motion induced by voltage-controlled in-plane strain gradients

Spin orbit interactions are rapidly emerging as the key for enabling efficient current-controlled spintronic devices. Much work has focused on the role of spin-orbit coupling at heavy metal/ferromagnet interfaces in generating current-induced spin-orbit torques. However, the strong influence of the spin-orbit-derived Dzyaloshinskii-Moriya interaction (DMI) on spin textures in these materials is now becoming apparent. Recent reports suggest DMI-stabilized homochiral domain walls (DWs) can be driven with high efficiency by spin torque from the spin Hall effect. However, the influence of the DMI on the current-induced magnetization switching has not been explored nor is yet well-understood, due in part to the difficulty of disentangling spin torques and spin textures in nano-sized confined samples. Here we study the magnetization reversal of perpendicular magnetized ultrathin dots, and show that the switching mechanism is strongly influenced by the DMI, which promotes a universal chiral non-uniform reversal, even for small samples at the nanoscale. We show that ultrafast current-induced and field-induced magnetization switching consists on local magnetization reversal with domain wall nucleation followed by its propagation along the sample. These findings, not seen in conventional materials, provide essential insights for understanding and exploiting chiral magnetism for emerging spintronics applications.

Value and sign influence of magnetostriction constant, λs, on magnetoimpedance (MI)–frequency dependence is evaluated for frequencies up to 30 MHz. For this goal, samples with positive (Fe77.5Si7.5B15), negative (Co72.5Si12.5B15) and nearly zero (Co68.15Fe4.35Si12.5B15) magnetostriction constant are used. Differences on MI maximum ratios above two orders of magnitude are achieved among samples with positive and negative magnetostriction constant. In the case of Co68.15Fe4.35Si12.5B15 sample, MI ratios above 1000% are obtained. These values of MI ratio are higher than usual values reported in the bibliography for this composition. In order to explain this feature, the internal magnetic structure of the amorphous wires has been taken into account.

Victor Raposo

Papers

Universal chiral-triggered magnetization switching in confined nanodots

Domain wall motion by localized temperature gradients

Skyrmion motion induced by voltage-controlled in-plane strain gradients

Universal chiral-triggered magnetization switching in confined nanodots

Influence of magnetostriction constant on magnetoimpedance–frequency dependence