V
Vikash K. Singh
Researcher at Solid State Physics Laboratory
Publications - 13
Citations - 136
Vikash K. Singh is an academic researcher from Solid State Physics Laboratory. The author has contributed to research in topics: Raman spectroscopy & Crystallite. The author has an hindex of 5, co-authored 8 publications receiving 80 citations.
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Coexistence of interfacial stress and charge transfer in graphene oxide-based magnetic nanocomposites
TL;DR: In this paper, the existence of both compressive stress and charge transfer process in hydrothermally synthesized cobalt ferrite-graphene oxide (CoFe2O4/GO) nanocomposites has been established.
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Coexistence of Interfacial Stress and Charge Transfer in Graphene Oxide based Magnetic Nanocomposites
TL;DR: In this article, the existence of compressive stress and charge transfer process in hydrothermally synthesized cobalt ferrite-graphene oxide (CoFe2O4/GO) nanocomposites was established.
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Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT
Kapil Narang,Kapil Narang,Rajesh K. Bag,Vikash K. Singh,Akhilesh Pandey,Sachin K. Saini,Ruby Khan,Aman Arora,M. V. G. Padmavati,Renu Tyagi,Rajendra Singh +10 more
TL;DR: In this paper, the growth of high quality AlGaN epi-layer in high electron mobility transistor (HEMT) is reported, and the optimization was carried out to improve surface morphology and quality of the AlGaE-layer to get high 2DEG (two-dimensional electron gas) properties of the HEMT structure.
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Effect of two step GaN buffer on the structural and electrical characteristics in AlGaN/GaN heterostructure
Akhilesh Pandey,Akhilesh Pandey,Vikash K. Singh,Sandeep Dalal,Rajesh K. Bag,Kapil Narang,Davinder Kaur,R. Raman,Renu Tyagi +8 more
TL;DR: In this article, the growth and characterization of a single-step and two-step GaN buffered AlGaN/GaN multilayer samples are presented, which demonstrates the reduction in the threading dislocation density (TDDs), surface/interface roughness and enhancement in electron mobility.
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Effect of fully strained AlN nucleation layer on the AlN/SiC interface and subsequent GaN growth on 4H–SiC by MOVPE
R.A. Khan,R.A. Khan,Rajesh K. Bag,Kapil Narang,Akhilesh Pandey,Sandeep Dalal,Vikash K. Singh,Sachin K. Saini,M. V. G. Padmavati,Renu Tyagi,Ufana Riaz +10 more
TL;DR: In this article, the effect of fully strained AlN nucleation layer (NL) on the AlN/SiC interface and on the subsequent GaN growth was investigated, and the thickness of the NL was varied between 10nm and 100nm in order to study the surface morphology and strain of AlN NL layer.