Showing papers in "arXiv: Mesoscale and Nanoscale Physics in 2017"

Higher-Order Topological Insulators

Abstract: Three-dimensional topological (crystalline) insulators are materials with an insulating bulk, but conducting surface states which are topologically protected by time-reversal (or spatial) symmetries. Here, we extend the notion of three-dimensional topological insulators to systems that host no gapless surface states, but exhibit topologically protected gapless hinge states. Their topological character is protected by spatio-temporal symmetries, of which we present two cases: (1) Chiral higher-order topological insulators protected by the combination of time-reversal and a four-fold rotation symmetry. Their hinge states are chiral modes and the bulk topology is $\mathbb{Z}_2$-classified. (2) Helical higher-order topological insulators protected by time-reversal and mirror symmetries. Their hinge states come in Kramers pairs and the bulk topology is $\mathbb{Z}$-classified. We provide the topological invariants for both cases. Furthermore we show that SnTe as well as surface-modified Bi$_2$TeI, BiSe, and BiTe are helical higher-order topological insulators and propose a realistic experimental setup to detect the hinge states.

On the origin of magnetic anisotropy in two dimensional CrI$_3$

Abstract: The observation of ferromagnetic order in a monolayer of CrI$_3$ has been recently reported, with a Curie temperature of 45 Kelvin and off-plane easy axis Here we study the origin of magnetic anisotropy, a necessary ingredient to have magnetic order in two dimensions, combining two levels of modeling, density functional calculations and spin model Hamiltonians We find two different contributions to the magnetic anisotropy of the material, both favoring off-plane magnetization and contributing to open a gap in the spin wave spectrum First, ferromagnetic super-exchange across the $\simeq $ 90 degree Cr-I-Cr bonds, are anisotropic, due to the spin orbit interaction of the ligand I atoms Second, a much smaller contribution that comes from the single ion anisotropy of the $S=3/2$ Cr atom Our results permit to establish the XXZ Hamiltonian, with a very small single ion anisotropy, as the adequate spin model for this system Using spin wave theory we estimate the Curie temperature and we highlight the essential role played by the gap that magnetic anisotropy induces on the magnon spectrum

Lasing in topological edge states of a 1D lattice

Abstract: Topology describes properties that remain unaffected by smooth distortions. Its main hallmark is the emergence of edge states localized at the boundary between regions characterized by distinct topological invariants. This feature offers new opportunities for robust trapping of light in nano- and micro-meter scale systems subject to fabrication imperfections and to environmentally induced deformations. Here we show lasing in such topological edge states of a one-dimensional lattice of polariton micropillars that implements an orbital version of the Su-Schrieffer-Heeger Hamiltonian. We further demonstrate that lasing in these states persists under local deformations of the lattice. These results open the way to the implementation of chiral lasers in systems with broken time-reversal symmetry and, when combined with polariton interactions, to the study of nonlinear topological photonics.

A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise

Abstract: Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation in nanostructures, however, its compatibility with enhanced coherence should be crucially questioned. Here we realise a single-electron spin qubit with isotopically-enriched phase coherence time (20 microseconds) and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge (instead of conventional magnetic) noise featured by a 1/f spectrum over seven decades of frequency. The qubit nevertheless exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average. Our work strongly suggests that designing artificial spin-electric coupling with account taken of charge noise is a promising route to large-scale spin-qubit systems having fault-tolerant controllability.

Topolectrical circuits

Abstract: Invented by Alessandro Volta and F\'elix Savary in the early 19th century, circuits consisting of resistor, inductor and capacitor (RLC) components are omnipresent in modern technology The behavior of an RLC circuit is governed by its circuit Laplacian, which is analogous to the Hamiltonian describing the energetics of a physical system We show that topological semimetal band structures can be realized as admittance bands in a periodic RLC circuit, where we employ the grounding to adjust the spectral position of the bands similar to the chemical potential in a material Topological boundary resonances (TBRs) appear in the impedance read-out of a topolectrical circuit, providing a robust signal for the presence of topological admittance bands For experimental illustration, we build the Su-Schrieffer-Heeger circuit, where our impedance measurement detects a TBR related to the midgap state Due to the versatility of electronic circuits, our topological semimetal construction can be generalized to band structures with arbitrary lattice symmetry Topolectrical circuits establish a bridge between electrical engineering and topological states of matter, where the accessibility, scalability, and operability of electronics synergizes with the intricate boundary properties of topological phases

Entangled massive mechanical oscillators

Abstract: An entangled quantum state of two or more particles or objects exhibits some of the most peculiar features of quantum mechanics. Entangled systems cannot be described independently of each other even though they may have an arbitrarily large spatial separation. Reconciling this property with the inherent uncertainty in quantum states is at the heart of some of the most famous debates in the development of quantum theory. Nonetheless, entanglement nowadays has a solid theoretical and experimental foundation, and it is the crucial resource behind many emerging quantum technologies. Entanglement has been demonstrated for microscopic systems, such as with photons, ions, and electron spins, and more recently in microwave and electromechanical devices. For macroscopic objects, however, entanglement becomes exceedingly fragile towards environmental disturbances. A major outstanding goal has been to create and verify the entanglement between the motional states of slowly-moving massive objects. Here, we carry out such an experimental demonstration, with the moving bodies realized as two micromechanical oscillators coupled to a microwave-frequency electromagnetic cavity that is used to create and stabilise the entanglement of the centre-of-mass motion of the oscillators. We infer the existence of entanglement in the steady state by combining measurement of correlated mechanical fluctuations with an analysis of the microwaves emitted from the cavity. Our work qualitatively extends the range of entangled physical systems, with implications in quantum information processing, precision measurement, and tests of the limits of quantum mechanics.

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics.

Weyl Metals

Abstract: Weyl metal is the first example of a conducting material with a nontrivial electronic structure topology, making it distinct from an ordinary metal Unlike in insulators, the nontrivial topology is not related to invariants, associated with completely filled bands, but with ones, associated with the Fermi surface The Fermi surface of a topological metal consists of disconnected sheets, each enclosing a Weyl node, which is a point of contact between two nondegenerate bands Such a point contact acts as a source of Berry curvature, or a magnetic monopole in momentum space Its charge, or the flux of the Berry curvature through the enclosing Fermi surface sheet, is a topological invariant We review the current state of this rapidly growing field, with a focus on bulk transport phenomena in topological metals

Topolectrical circuit realization of topological corner modes

Abstract: Quantized electric quadrupole insulators have recently been proposed as novel quantum states of matter in two spatial dimensions. Gapped otherwise, they can feature zero-dimensional topological corner mid-gap states protected by the bulk spectral gap, reflection symmetries and a spectral symmetry. Here we introduce a topolectrical circuit design for realizing such corner modes experimentally and report measurements in which the modes appear as topological boundary resonances in the corner impedance profile of the circuit. Whereas the quantized bulk quadrupole moment of an electronic crystal does not have a direct analogue in the classical topolectrical-circuit framework, the corner modes inherit the identical form from the quantum case. Due to the flexibility and tunability of electrical circuits, they are an ideal platform for studying the reflection symmetry-protected character of corner modes in detail. Our work therefore establishes an instance where topolectrical circuitry is employed to bridge the gap between quantum theoretical modelling and the experimental realization of topological band structures.

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

Abstract: The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

Magnonic crystals for data processing

Abstract: Magnons - the quanta of spin waves - propagating in magnetic materials with wavelengths at the nanometer-scale and carrying information in the form of an angular momentum, can be used as data carriers in next-generation, nano-sized low-loss information processing systems. In this respect, artificial magnetic materials with properties periodically varied in space, known as magnonic crystals, are especially promising for controlling and manipulating the magnon currents. In this article, different approaches for the realization of static, reconfigurable, and dynamic magnonic crystals are presented along with a variety of novel wave phenomena discovered in these crystals. Special attention is devoted to the utilization of magnonic crystals for processing of analog and digital information.

Electrical signature of individual magnetic skyrmions in multilayered systems

Abstract: Magnetic skyrmions are topologically protected whirling spin textures that can be stabilized in magnetic materials in which a chiral interaction is present. Their limited size together with their robustness against the external perturbations promote them as the ultimate magnetic storage bit in a novel generation of memory and logic devices. Despite many examples of the signature of magnetic skyrmions in the electrical signal, only low temperature measurements, mainly in magnetic materials with B20 crystal structure, have demonstrated the skyrmions contribution to the electrical transport properties. Using the combination of Magnetic Force Microscopy (MFM) and Hall resistivity measurements, we demonstrate the electrical detection of sub-100 nm skyrmions in multilayered thin film at room temperature (RT). We furthermore analyse the room temperature Hall signal of a single skyrmion which contribution is mainly dominated by anomalous Hall effect.

What's so Hot about Electrons in Metal Nanoparticles?

Abstract: Metal nanoparticles are excellent light absorbers. The absorption processes create highly excited electron-hole pairs and recently there has been interest in harnessing these hot charge carriers for photocatalysis and solar energy conversion applications. The goal of this Perspectives article is to describe the dynamics and energy distribution of the charge carriers produced by photon absorption, and the implications for the photocatalysis mechanism. We will also discuss how spectroscopy can be used to provide insight into the coupling between plasmons and molecular resonances. In particular, the analysis shows that the choice of material and shape of the nanocrystal can play a crucial role in hot electron generation and coupling between plasmons and molecular transitions. The detection and even calculation of many-body hot-electron processes in the plasmonic systems with continuous spectra of electrons and short lifetimes are challenging, but at the same time very interesting from the point of view of both potential applications and fundamental physics. We propose that developing an understanding of these processes will provide a pathway for improving the efficiency of plasmon-induced photocatalysis.

Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

Abstract: The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply voltage and the overall power consumption. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier. Meanwhile, two-dimensional (2D) semiconductors, such as atomically thin transition metal dichalcogenides (TMDs) due to their low dielectric constant, and ease of integration in a junctionless transistor topology, offer enhanced electrostatic control of the channel. Here, we combine these two advantages and demonstrate for the first time a molybdenum disulfide (MoS2) 2D steep slope transistor with a ferroelectric hafnium zirconium oxide layer (HZO) in the gate dielectric stack. This device exhibits excellent performance in both on- and off-states, with maximum drain current of 510 {\mu}A/{\mu}m, sub-thermionic subthreshold slope and is essentially hysteresis-free. Negative differential resistance (NDR) was observed at room temperature in the MoS2 negative capacitance field-effect-transistors (NC-FETs) as the result of negative capacitance due to the negative drain-induced-barrier-lowering (DIBL). High on-current induced self-heating effect was also observed and studied.

Tuning quantum non-local effects in graphene plasmonics

Abstract: The response of an electron system to electromagnetic fields with sharp spatial variations is strongly dependent on quantum electronic properties, even in ambient conditions, but difficult to access experimentally. We use propagating graphene plasmons, together with an engineered dielectric-metallic environment, to probe the graphene electron liquid and unveil its detailed electronic response at short wavelengths.The near-field imaging experiments reveal a parameter-free match with the full theoretical quantum description of the massless Dirac electron gas, in which we identify three types of quantum effects as keys to understanding the experimental response of graphene to short-ranged terahertz electric fields. The first type is of single-particle nature and is related to shape deformations of the Fermi surface during a plasmon oscillations. The second and third types are a many-body effect controlled by the inertia and compressibility of the interacting electron liquid in graphene. We demonstrate how, in principle, our experimental approach can determine the full spatiotemporal response of an electron system.

Hysteresis in the transfer characteristics of MoS2 transistors

Abstract: We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trapping, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.

Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal

Abstract: The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals have been proposed as two-dimensional (2D) TIs exhibiting the QSHE, possibly even at high temperatures. However, conclusive evidence for a monolayer QSHE is still lacking, and systems based on semiconductor heterostructures operate at temperatures close to liquid helium. Here we report the observation of the QSHE in monolayer WTe2 at temperatures up to 100 Kelvin. The monolayer exhibits the hallmark quantized transport conductance, ~ e2/h per edge, in the short edge limit. Moreover, a magnetic field suppresses the conductance, and the observed Zeeman-type gap indicates the existence of a Kramers degenerate point, demonstrating the importance of time reversal symmetry for protection from elastic backscattering. Our results establish the high-temperature QSHE and open a new realm for the discovery of topological phases based on 2D crystals.

Graphene Phase Modulator

Abstract: We demonstrate a 10Gb/s Graphene Phase Modulator (GPM) integrated in a Mach-Zehnder interferometer configuration. This is a compact device, with a phase-shifter length of only 300$\mu$m, and 35dB extinction ratio. The GPM has modulation efficiency of 0.28Vcm, one order of magnitude higher compared to state-of-the-art depletion p-n junction Si phase modulators. Our GPM operates with 2V peak-to-peak driving voltage in a push-pull configuration, and it has been tested in a binary transmission of a non-return-to-zero data stream over 50km single mode fibre. This device is the key building block for graphene-based integrated photonics, enabling compact and energy efficient hybrid Si-graphene modulators for telecom, datacom and other applications

Why does bulk boundary correspondence fail in some non-hermitian topological models

Abstract: Bulk boundary correspondence is crucial to topological insulator as it associates the boundary states (with zero energy, chiral or helical) to topological numbers defined in bulk The application of this correspondence needs a prerequisite condition which is usually not mentioned explicitly: the boundaries themselves cannot alter the bulk states, so as to the topological numbers defined on them In non-hermitian models with fractional winding number, we prove that such precondition fails and the bulk boundary correspondence is cut out We show that, as eliminating the hopping between the boundaries to simulate the evolution of a system from the periodic boundary condition to the open boundary condition, exceptional points must be passed through and the topological structure of the spectrum has been changed This makes the topological structures of a chain with open boundary totally different from that without the boundary We also argue that such exotic behavior does not emerge when the open boundary is replaced by a domain-wall So the index theorem can be applied to the systems with domain-walls but cannot be further used to those with open boundary

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

Abstract: We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10^4 s, due to photo-charge trapping at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 k{\Omega}/{\mu}m, ON current as high as 1.25 nA/{\mu}m, 10^5 ON-OFF ratio, mobility of 1 cm^2/Vs and photoresponsivity R=1 A/W.

Tunable Acoustic Valley-Hall Edge States in Reconfigurable Phononic Elastic Waveguides

Abstract: This study investigates the occurrence of acoustic topological edge states in a 2D phononic elastic waveguide due to a phenomenon that is the acoustic analogue of the quantum valley Hall effect. We show that a topological transition takes place between two lattices having broken space inversion symmetry due to the application of a tunable strain field. This condition leads to the formation of gapless edge states at the domain walls, as further illustrated by the analysis of the bulk-edge correspondence and of the associated topological invariants. Although time reversal symmetry is still intact in these systems, the edge states are topologically protected when inter-valley mixing is either weak or negligible. Interestingly, topological edge states can also be triggered at the boundary of a single domain if boundary conditions are properly selected. We also show that the static modulation of the strain field allows tuning the response of the material between the different supported edge states.

Dynamic band structure tuning of graphene moir\'e superlattices with pressure

Abstract: Heterostructures of atomically-thin materials have attracted significant interest owing to their ability to host novel electronic properties fundamentally distinct from their constituent layers. In the case of graphene on boron nitride, the closely-matched lattices yield a moir\'e superlattice that modifies the graphene electron dispersion and opens gaps both at the primary Dirac point (DP) and the moir\'e-induced secondary Dirac point (SDP) in the valence band. While significant effort has focused on controlling the superlattice period via the rotational stacking order, the role played by the magnitude of the interlayer coupling has received comparatively little attention. Here, we modify the interaction between graphene and boron nitride by tuning their separation with hydrostatic pressure. We observe a dramatic enhancement of the DP gap with increasing pressure, but little change in the SDP gap. Our surprising results identify the critical role played by atomic-scale structural deformations of the graphene lattice and reveal new opportunities for band structure engineering in van der Waals heterostructures.

Coherent spin-qubit photon coupling

Abstract: Electron spins hold great promise for quantum computation due to their long coherence times. An approach to realize interactions between distant spin-qubits is to use photons as carriers of quantum information. We demonstrate strong coupling between single microwave photons in a NbTiN high impedance cavity and a three-electron spin-qubit in a GaAs triple quantum dot. We resolve the vacuum Rabi mode splitting with a coupling strength of $g/2\pi\simeq31$ MHz and a qubit decoherence of $\gamma_2/2\pi\simeq 20$ MHz. We can tune the decoherence electrostatically and obtain a minimal $\gamma_2/2\pi\simeq 10$ MHz for $g/2\pi\simeq 23$ MHz. The dependence of the qubit-photon coupling strength on the tunable electric dipole moment of the qubit is measured directly using the ac Stark effect. Our demonstration of strong spin-photon interaction is an important step towards coherent long-distance coupling of spin-qubits.

Antiskyrmions stabilized at interfaces by anisotropic Dzyaloshinskii-Moriya interaction

Abstract: Chiral magnets are an emerging class of topological matter harbouring localized and topologically protected vortex-like magnetic textures called skyrmions, which are currently under intense scrutiny as a new entity for information storage and processing. Here, on the level of micromagnetics we rigorously show that chiral magnets cannot only host skyrmions but also antiskyrmions as least-energy configurations over all non-trivial homotopy classes. We derive practical criteria for their occurrence and coexistence with skyrmions that can be fulfilled by (110)-oriented interfaces in dependence on the electronic structure. Relating the electronic structure to an atomistic spin-lattice model by means of density-functional calculations and minimizing the energy on a mesoscopic scale applying spin-relaxation methods, we propose a double layer of Fe grown on a W(110) substrate as a practical example. We conjecture that ultrathin magnetic films grown on semiconductor or heavy metal substrates with $C_{2v}$ symmetry are prototype classes of materials hosting magnetic antiskyrmions.

Skyrmion Gas Manipulation for Probabilistic Computing

Abstract: The topologically protected magnetic spin configurations known as skyrmions offer promising applications due to their stability, mobility and localization. In this work, we emphasize how to leverage the thermally driven dynamics of an ensemble of such particles to perform computing tasks. We propose a device employing a skyrmion gas to reshuffle a random signal into an uncorrelated copy of itself. This is demonstrated by modelling the ensemble dynamics in a collective coordinate approach where skyrmion-skyrmion and skyrmion-boundary interactions are accounted for phenomenologically. Our numerical results are used to develop a proof-of-concept for an energy efficient ($\sim\mu\mathrm{W}$) device with a low area imprint ($\sim\mu\mathrm{m}^2$). Whereas its immediate application to stochastic computing circuit designs will be made apparent, we argue that its basic functionality, reminiscent of an integrate-and-fire neuron, qualifies it as a novel bio-inspired building block.

High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

Abstract: In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current 103. These results represent the state-of-art performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector.

Skyrmions in Magnetic Multilayers

Abstract: Symmetry breaking together with strong spin-orbit interaction give rise to many exciting phenomena within condensed matter physics. A recent example is the existence of chiral spin textures, which are observed in magnetic systems lacking inversion symmetry. These chiral spin textures, including domain walls and magnetic skyrmions, are both fundamentally interesting and technologically promising. For example, they can be driven very efficiently by electrical currents, and exhibit many new physical properties determined by their real-space topological characteristics. Depending on the details of the competing interactions, these spin textures exist in different parameter spaces. However, the governing mechanism underlying their physical behaviors remain essentially the same. In this review article, the fundamental topological physics underlying these chiral spin textures, the key factors for materials optimization, and current developments and future challenges will be discussed. In the end, a few promising directions that will advance the development of skyrmion based spintronics will be highlighted.

Colossal Bulk Photovoltaic Effect in a Weyl Semimetal

Abstract: Broadband, efficient and fast conversion of light to electricity is crucial for sensing and clean energy. Here we reveal the largest observed bulk photo-voltaic effect (BPVE), an intrinsic mechanism predicted to be ultrafast and exceed the Shockley-Quiesser limit. This discovery results from combining recent developments in the connection of BPVE to topology, Weyl semimetals and focused-ion beam fabrication. Our room temperature observation of the first BPVE in the mid-IR, is enabled by microscopic devices of the Weyl semimetal TaAs. Detailed symmetry analysis enables unambiguous separation of this response from competing photo-thermal effects. The size and wavelength range of the shift current offers new opportunities in optical detectors, clean energy, and topology, while directly demonstrating the utility of Weyl semimetals for applications.

Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature

Abstract: Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials.

Band Structure Engineering of 2D Materials using Patterned Dielectric Superlattices

Abstract: The ability to manipulate two-dimensional (2D) electrons with external electric fields provides a route to synthetic band engineering. By imposing artificially designed and spatially periodic superlattice (SL) potentials, 2D electronic properties can be further engineered beyond the constraints of naturally occurring atomic crystals. Here we report a new approach to fabricate high mobility SL devices by integrating surface dielectric patterning with atomically thin van der Waals materials. By separating the device assembly and SL fabrication processes, we address the intractable tradeoff between device processing and mobility degradation that constrains SL engineering in conventional systems. The improved electrostatics of atomically thin materials moreover allows smaller wavelength SL patterns than previously achieved. Replica Dirac cones in ballistic graphene devices with sub 40nm wavelength SLs are demonstrated, while under large magnetic fields we report the fractal Hofstadter spectra from SLs with designed lattice symmetries vastly different from that of the host crystal. Our results establish a robust and versatile technique for band structure engineering of graphene and related van der Waals materials with dynamic tunability.