Spin currents can apply useful torques in spintronic devices. The spin Hall effect has been proposed as a source of spin current, but its modest strength has limited its usefulness. We report a giant spin Hall effect (SHE) in β-tantalum that generates spin currents intense enough to induce efficient spin-torque switching of ferromagnets at room temperature. We quantify this SHE by three independent methods and demonstrate spin-torque switching of both out-of-plane and in-plane magnetized layers. We furthermore implement a three-terminal device that uses current passing through a tantalum-ferromagnet bilayer to switch a nanomagnet, with a magnetic tunnel junction for read-out. This simple, reliable, and efficient design may eliminate the main obstacles to the development of magnetic memory and nonvolatile spin logic technologies.

Spin-torque switching with the giant spin hall effect of tantalum

In solid-state materials with strong relativistic spin-orbit coupling, charge currents generate transverse spin currents. The associated spin Hall and inverse spin Hall effects distinguish between charge and spin current where electron charge is a conserved quantity but its spin direction is not. This review provides a theoretical and experimental treatment of this subfield of spintronics, beginning with distinct microscopic mechanisms seen in ferromagnets and concluding with a discussion of optical-, transport-, and magnetization-dynamics-based experiments closely linked to the microscopic and phenomenological theories presented.

Spin Hall effects

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.

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Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

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We show that in a perpendicularly magnetized Pt/Co bilayer the spin-Hall effect (SHE) in Pt can produce a spin torque strong enough to efficiently rotate and switch the Co magnetization. We calculate the phase diagram of switching driven by this torque, finding quantitative agreement with experiments. When optimized, the SHE torque can enable memory and logic devices with similar critical currents and improved reliability compared to conventional spin-torque switching. We suggest that the SHE torque also affects current-driven magnetic domain wall motion in Pt/ferromagnet bilayers.

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Current-induced switching of perpendicularly magnetized magnetic layers using spin torque from the spin Hall effect.

Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents in nonmagnetic conductors. Here we study the spin-pumping-induced voltages due to the inverse spin Hall effect in permalloy/normal metal bilayers integrated into coplanar waveguides for different normal metals and as a function of angle of the applied magnetic field direction, as well as microwave frequency and power. We find good agreement between experimental data and a theoretical model that includes contributions from anisotropic magnetoresistance and inverse spin Hall effect. The analysis provides consistent results over a wide range of experimental conditions as long as the precise magnetization trajectory is taken into account. The spin Hall angles for Pt, Pd, Au, and Mo were determined with high precision to be 0.013±0.002, 0.0064±0.001, 0.0035±0.0003, and ?0.0005±0.0001, respectively.

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Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers

Spin transfer appears to be a promising tool for improving spintronics devices. Experiments that quantitatively access the magnitude of the spin transfer are required for a fundamental understanding of this phenomenon. By inductively measuring spin waves propagating along a permalloy strip subjected to a large electrical current, we observed a current-induced spin wave Doppler shift that we relate to the adiabatic spin transfer torque. Because spin waves provide a well-defined system for performing spin transfer, we anticipate that they could be used as an accurate probe of spin-polarized transport in various itinerant ferromagnets.

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Current-induced spin-wave Doppler shift.

We report a complete study of spin-wave transduction combining microwave measurements performed over a frequency range of [1--15] GHz on Permalloy strips ($\text{thickness}=10--20\text{ }\text{nm}$, $\text{width}=2--8\text{ }\ensuremath{\mu}\text{m}$) and an accurate modeling of the experiment. This technique has been used recently to assess the spin polarization of the electrical current by measuring a current-induced spin-wave Doppler shift. We present here an electromagnetism calculation based on the magnetostatic wave theory combined with the Gilbert form of the damping that can be used directly as an optimization tool for future spin-wave experiments.

Spin-wave transduction at the submicrometer scale: Experiment and modeling

The spin diffusion length of Pt at room temperature and at 8 K is experimentally determined via spin pumping and spin Hall effect in permalloy/Pt bilayers. Voltages generated during excitation of ferromagnetic resonance from the inverse spin Hall effect and anisotropic magnetoresistance effect were investigated with a broadband approach. Varying the Pt layer thickness gives rise to an evolution of the voltage line shape due to the superposition of the above two effects. By studying the ratio of the two voltage components with the Pt layer thickness, the spin diffusion length of Pt can be directly extracted. We obtain a spin diffusion length of ∼1.2 nm at room temperature and ∼1.6 nm at 8 K.

Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

Growth of nm-thick yttrium iron garnet (YIG) films by sputtering and ferromagnetic resonance (FMR) properties in the films were studied. The FMR linewidth of the YIG film decreased as the film thickness was increased from several nanometers to about 100 nm. For films with very smooth surfaces, the linewidth increased linearly with frequency. In contrast, for films with big grains on the surface, the linewidth-frequency response was strongly nonlinear. Films in the 7–26 nm thickness range showed a surface roughness between 0.1 nm and 0.4 nm, a 9.48-GHz FMR linewidth in the 6–10 Oe range, and a damping constant of about 0.001.

Vincent Vlaminck

Papers

Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers

Current-induced spin-wave Doppler shift.

Spin-wave transduction at the submicrometer scale: Experiment and modeling

Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

Ferromagnetic resonance of sputtered yttrium iron garnet nanometer films