Vladimir L. Solozhenko

TL;DR: It is found that the ionicity of the phase affects its electronic bandgap, infrared adsorption and dielectric constants, and that it arises from the different electronic properties of the B2 pairs and B12 clusters and the resultant charge transfer between them.

TL;DR: Cubic BC2N was synthesized from graphite-like cubic boron nitride (BC2N) at pressures above 18 GPa and temperatures higher than 2200 K as discussed by the authors.

TL;DR: The synthesis of cubic BC5 (c-BC5), the diamondlike B-C phase with the highest boron content ever achieved, is reported, at 24 GPa and about 2200 K, using both a laser-heated diamond anvil cell and large-volume multianvil apparatus.

TL;DR: In this paper, the authors reported a synthesis of unique superhard aggregated boron nitride nanocomposites (ABNNCs) showing the enhancement of hardness up to 100% in comparison with single crystal c-BN.

TL;DR: In this article, the authors carried out laser-induced fluorescence measurements of hBN powder at room temperature under different environmental conditions (dry powder and suspensions in water or ethanol) and determined the absorption onset, related to the bandgap energy of this indirect gap semiconductor, has been precisely determined to be E g = 4.02±0.01 eV.