V
Vyacheslav G. Storchak
Researcher at Kurchatov Institute
Publications - 162
Citations - 1603
Vyacheslav G. Storchak is an academic researcher from Kurchatov Institute. The author has contributed to research in topics: Muonium & Muon spin spectroscopy. The author has an hindex of 20, co-authored 151 publications receiving 1323 citations. Previous affiliations of Vyacheslav G. Storchak include TRIUMF & University of British Columbia.
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Emerging two-dimensional ferromagnetism in silicene materials
Andrey M. Tokmachev,Dmitry V. Averyanov,Oleg E. Parfenov,Alexander N. Taldenkov,Igor A. Karateev,Ivan S. Sokolov,Oleg A. Kondratev,Vyacheslav G. Storchak +7 more
TL;DR: The authors report evolution of bulk antiferromagnetism to intrinsic 2D in-plane ferromagnetsism in layered structures of silicene functionalized by rare-earth atoms as they are scaled down to one monolayer.
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Quantum diffusion of muons and muonium atoms in solids
TL;DR: The diffusion of muons and muonium through solids using spin relaxation has been studied over many years using the technique of spin relaxation using both theory and experiment, emphasizing the mechanisms for dissipation, the role of barrier fluctuations, and effects of crystal disorder on the transport as mentioned in this paper.
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High-Temperature Magnetism in Graphene Induced by Proximity to EuO.
Dmitry V. Averyanov,Ivan S. Sokolov,Andrey M. Tokmachev,Oleg E. Parfenov,Igor A. Karateev,Alexander N. Taldenkov,Vyacheslav G. Storchak +6 more
TL;DR: Graphene-selective elimination of p z orbitals at triangular sublattices tailors graphene magnetism, and the use of the EuO/graphene system in spintronics is justified.
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Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications.
Dmitry V. Averyanov,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,I. A. Likhachev,Vyacheslav G. Storchak +5 more
TL;DR: In this article, a new technique for control of EuO/Si interface on submonolayer level is presented. But, despite the success of metallic spintronics, tremendous efforts have been invested into the less developed semiconductor spintronic devices, in particular, with the aim to produce three-terminal spin transistors.
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Lanthanide f7 metalloxenes – a class of intrinsic 2D ferromagnets
Andrey M. Tokmachev,Dmitry V. Averyanov,Alexander N. Taldenkov,Oleg E. Parfenov,Igor A. Karateev,Ivan S. Sokolov,Vyacheslav G. Storchak +6 more
TL;DR: In this article, it was shown that lanthanide metalloxenes form a class of intrinsic 2D magnetism and their stoichiometric layered structure LnX2 is composed of a triangular lattice of lanthanides ions (Eu or Gd) coupled with a 2D Xene sheet, a honeycomb network formed by Si or Ge.