W
W. Nijman
Researcher at Philips
Publications - 11
Citations - 305
W. Nijman is an academic researcher from Philips. The author has contributed to research in topics: Substrate (printing) & Heterojunction. The author has an hindex of 6, co-authored 11 publications receiving 302 citations.
Papers
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Journal ArticleDOI
X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers
W.J. Bartels,W. Nijman +1 more
TL;DR: In this paper, double-crystal rocking curves of Ga 1-x Al x As/GaAs double-heterostructures are presented to determine the aluminium content of the two Ga 1 -x Al X As layers of the laser structure independently and with an absolute accuracy of 1% aluminium.
Journal ArticleDOI
Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substrates
W.J. Bartels,W. Nijman +1 more
TL;DR: An asymmetry in the character of the misfit dislocations, which were running in two orthogonal 〈110〉 directions in the (001) growth plane, was found in this paper.
Journal ArticleDOI
High quality InGaAsPInP for multiple quantum well laser diodes grown by low-pressure OMVPE
P.J.A. Thijs,T. van Dongen,P.I. Kuindersma,J.J.M. Binsma,L. F. Tiemeyer,J.M. Lagemaat,D. Moroni,W. Nijman +7 more
TL;DR: In this article, a DCPBH multiple quantum well (QW) was constructed with InGaAsP/InP and InGaAAs/InGaAASP structures by LP-OMVPE, and multiple line photoluminescence (PL) emission at 2 K was observed from thin QWs which were grown on 0.2° misoriented (001) InP substrates.
Journal ArticleDOI
Improved boat for multiple-bin liquid phase epitaxy
T.G.J. van Oirschot,W. Nijman +1 more
TL;DR: In this article, a new type of boat for horizontal, multiple-bin liquid phase epitaxy (LPE) is described in which horizontal movement of the solution wells is combined with independent vertical movement of a substrate by means of a wedge operated from outside the furnace.
Journal ArticleDOI
LPE growth of DH laser structures with the double source method
TL;DR: In this paper, it is shown that a second solid phase may appear in the p-GaAlAs solutions at a supersaturation as small as 4°C, which reduces the growth rate on the substrates by a factor of about 2.