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Waqaas Rehman

Researcher at University of Oxford

Publications -  5
Citations -  3431

Waqaas Rehman is an academic researcher from University of Oxford. The author has contributed to research in topics: Perovskite (structure) & Halide. The author has an hindex of 4, co-authored 5 publications receiving 2758 citations. Previous affiliations of Waqaas Rehman include Airbus.

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Journal ArticleDOI

A mixed-cation lead mixed-halide perovskite absorber for tandem solar cells

TL;DR: It is shown that using cesium ions along with formamidinium cations in lead bromide–iodide cells improved thermal and photostability and lead to high efficiency in single and tandem cells.
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Photovoltaic mixed-cation lead mixed-halide perovskites: links between crystallinity, photo-stability and electronic properties

TL;DR: In this paper, the authors show that high crystalline quality is a prerequisite for good optoelectronic quality and band gap stability of mixed-cation lead mixed-halide perovskite CsyFA (1−y)Pb(BrxI(1−x))3.
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Charge‐Carrier Dynamics and Mobilities in Formamidinium Lead Mixed‐Halide Perovskites

TL;DR: The mixed-halide perovskite FAPb(Bry I1-y )3 is attractive for color-tunable and tandem solar cells and bimolecular and Auger charge-carrier recombination rate constants strongly correlate with the Br content, y, suggesting a link with electronic structure.
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Crystallization Kinetics and Morphology Control of Formamidinium-Cesium Mixed-Cation Lead Mixed-Halide Perovskite via Tunability of the Colloidal Precursor Solution.

TL;DR: Using dynamic light scattering analysis, the dissolution of colloids over a time span triggered by the addition of hydrohalic acids is monitored and these colloids appear to provide nucleation sites for the perovskite crystallization, which critically impacts morphology, crystal quality, and optoelectronic properties.
Proceedings ArticleDOI

Recovery of high energy proton defects in GaInP2/GaAs/Ge triple junction solar cells by isothermal annealing

TL;DR: In this paper, defect recovery of high energy proton irradiated GaInP2/GaAs/Ge triple junctions cells and related component cells by isothermal annealing is reported.