Showing papers by "Warren B. Jackson published in 1989"
PARC1
TL;DR: The kinetics (time, temperature, bias, and doping dependence) of these defects as well as most other metastable-defect processes are quantitatively explained by hydrogen diffusion and the creation of defects due to the presence of excess band-tail carriers.
Abstract: This paper presents results of studies on carrier-induced metastable defect creation in hydrogenated amorphous silicon. The metastable defects were studied by measuring the threshold voltage shifts on thin-film amorphous silicon transistors and capacitors as a function of time, temperature, and bias. The kinetics (time, temperature, bias, and doping dependence) of these defects as well as most other metastable-defect processes are quantitatively explained by hydrogen diffusion and the creation of defects due to the presence of excess band-tail carriers.
176 citations
01 Jan 1989
16 citations
PARC1
TL;DR: In this article, the diffusion rate of the dominant paramagnetic defect in hydrogenated amorphous silicon (g = 2.0055) has been estimated for temperatures between 360-450 C.
Abstract: The diffusion rate of the dominant paramagnetic defect in hydrogenated amorphous silicon (g = 2.0055) has been estimated for temperatures between 360–450 C. The diffusion rate for this defect is less than the rate for hydrogen. The high defect density material retards H diffusion. These results do not support models postulating high defect mobility or H motion via paramagnetic defect interactions.
5 citations
TL;DR: In this paper, the results of a comparison of the electron trapping in PECVD to low pressure CVD (LPCVD) nitrides were presented. And the average trapping distance was 3-20nm in the various nitride and the density of the traps was found to be around 2X1018 cm−3 for the PECV nitrided while the density for LPCVD nitride was about 4×1018cm−3.
Abstract: This paper presents the results of a comparison of the electron trapping in plasma-enhanced chemical vapor deposited nitrides (PECVD) to low pressure CVD (LPCVD) nitrides. The electron trapping was investigated using avalanche injection of electrons from the c-Si substrate over a thermal Si02 barrier into the various nitrides. The average trapping distance was 3–20nm in the various nitrides and the density of the traps was found to be around 2X1018 cm−3 for the PECVD nitrides while the density for LPCVD nitride was about 4X1018traps cm−3.
PARC1
TL;DR: In this paper, the authors studied the defect formation process using threshold-voltage transient spectroscopy and showed that the barrier heights and final state energies are dependent on carrier density.
Abstract: The kinetics of the defect formation process is studied using threshold-voltage transient spectroscopy. Metastable defect formation is given by hopping over an exponential distribution of barriers. The barrier heights and final state energies are dependent on carrier density. This carrier density dependence accounts for the effects of doping on H diffusion.