Showing papers by "Warren B. Jackson published in 1997"
16 Apr 1997
TL;DR: It is demonstrated that human-vision-model-based image quality metrics not only correlate strongly with subjective evaluations of image quality but also with human observer performance on visual recognition tasks.
Abstract: We demonstrate that human-vision-model-based image quality metrics not only correlate strongly with subjective evaluations of image quality but also with human observer performance on visual recognition tasks. By varying amorphous silicon image system design parameters, the performance of human observers in target identification using the resulting test images was measured, and compared with the target weighted just-noticeable-difference produced by a human vision model applied to the same set of images. The detectability of model observer with the human observer was highly correlated for a wide range of image system design parameters. These results demonstrate that the human vision model can be used to produce human observer performance optimized imaging systems without the need for extensive human trials. The human vision based tumor detectors represent a generalization of channelized Hotelling models to non-linear, perceptually based models.
46 citations
TL;DR: Amorphous silicon image sensor arrays are being developed for X-ray imaging and document scanning as mentioned in this paper, with each pixel containing a sensor and a TFT, both fabricated with a-Si:H by photolithography on 12 × 13″ glass substrates.
26 citations
PARC1
1 citations
TL;DR: In this article, the authors developed a method for determination of hydrogen density of states (DOS) in silicon carbide films based on fractional evolution experiments, which is performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate.
Abstract: Hydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. The authors have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary methods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, they demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. They further validate both methods by analyzing experimental fractional evolution data for an amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.