Showing papers by "Warren B. Jackson published in 2010"

Advances in roll-to-roll imprint lithography for display applications

Abstract: A solution to the problems of roll-to-roll lithography on flexible substrates is presented. We have developed a roll-toroll imprint lithography technique to fabricate active matrix transistor backplanes on flexible webs of polyimide that have a blanket material stack of metals, dielectrics, and semiconductors. Imprint lithography produces a multi-level 3- dimensional mask that is then successively etched to pattern the underlying layers into the desired structures. This process, Self-Aligned Imprint Lithography (SAIL), solves the layer-to-layer alignment problem because all masking levels are created with one imprint step. The processes and equipment required for complete roll-to-roll SAIL fabrication will be described. Emphasis will be placed on the advances in the roll-to-roll imprint process which have enabled us to produce working transistor arrays.

Tactile Display for Providing Touch Feedback

Abstract: A tactile display has a contact surface that has multiple addressable pixels. Each pixel has a vibration element that is energizable to vibrate at a selected frequency and amplitude. The vibration of selected pixels of the tactile display provides tactile feedback to a user's finger touching the contact surface.

Tactile display using distributed fluid ejection

Abstract: A tactile display for providing tactile feedback has a touch surface layer formed of a plurality of pixels. Each pixel has an aperture for ejecting a fluid, and a valve for opening and closing the aperture. The valve is operable to modulate the fluid ejection through the aperture at a frequency selected for detection by the somatic sensors of a human finger.

77.3: Invited Paper: Roll‐to‐Roll Manufacturing of Backplanes for Paper‐Like Displays

Abstract: HP and Phicot are planning the world's first R2R (roll-to-roll) manufacturing line for display backplanes based on the SAIL (Self-Aligned Imprint Lithography) process. Economic benefits for R2R compared to batch, cost comparisons of different R2R processes, comparison of substrate options, and necessary supply chain infrastructure developments are presented.

Metastability in multicomponent oxide transistors

Abstract: Results of an investigation of bias stress metastability of multicomponent, zinc-indium and zinc-tin oxides, transistors are investigated. The bias stress as a function of various dielectrics, passivation layers, and illumination conditions indicate that for negative gate bias stressing defects often are created in the semiconductor, probably near or at the surface, particularly if the devices are unpassivated. Oxygen vacancy formation is a likely candidate. For many dielectrics, the positive gate bias metastability appears to be dominated by charge trapping within the insulator. For zinc-tin oxide devices, the kinetics of the metastability follows a stretched exponential behavior with a power law dependence on gate voltage. Correcting for the observed Meyer-Neldel behavior, the activation energy of τ is about 1.2 eV for defect generation and the disorder energy from β is about 0.06 eV. By using passivation, the best gate dielectrics and annealing protocols, we have reduced the bias stress metastability to about 0.1 V for a 25,000 s stress at 22 °C.

Nanofabrication for transistor matrix produced by self-aligned imprint lithography.

Abstract: This paper describes an approach of combining nanofabrication techniques with roll-to-roll fabrication of thin film transistor backplanes for flexible display applications.