W
Wayne R. McKinney
Researcher at Lawrence Berkeley National Laboratory
Publications - 142
Citations - 3900
Wayne R. McKinney is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Metrology & Beamline. The author has an hindex of 31, co-authored 141 publications receiving 3732 citations. Previous affiliations of Wayne R. McKinney include University of Rochester & Brookhaven National Laboratory.
Papers
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High-power terahertz radiation from relativistic electrons
TL;DR: Calculations and measurements are reported that confirm the production of high-power broadband THz radiation from subpicosecond electron bunches in an accelerator, several orders of magnitude higher than any existing source, which could enable various new applications.
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IR spectroscopic characteristics of cell cycle and cell death probed by synchrotron radiation based Fourier transform IR spectromicroscopy.
TL;DR: Clear changes are observed in the spectral regions corresponding to proteins, DNA, and RNA as a cell changes from the G(1)-phase to the S-phase and finally into mitosis as well as variations in DNA/RNA content and packing as the cell cycle progresses.
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Observation of Broadband Self-Amplified Spontaneous Coherent Terahertz Synchrotron Radiation in a Storage Ring
J. M. Byrd,J. M. Byrd,Wim Leemans,A. Loftsdottir,A. Loftsdottir,B. Marcelis,Michael C. Martin,Wayne R. McKinney,Fernando Sannibale,T. Scarvie,Christoph Steier +10 more
TL;DR: Observations made at the Advanced Light Source are consistent with the values predicted by the proposed microbunching model, demonstrating a new instability regime for high energy synchrotron radiation sources and could impact the design of future sources.
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Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure
W. Shan,Joel W. Ager,Kin Man Yu,Wladek Walukiewicz,E. E. Haller,Michael C. Martin,Wayne R. McKinney,W. Yang +7 more
TL;DR: In this paper, the authors investigated the dependence of the fundamental band gap of AlxGa1−xN epitaxial films on Al content and applied hydrostatic pressure and found that the absorption edge associated with the direct Γ band gap shifts linearly towards higher energy under applied pressure.
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Performance of a high resolution, high flux density SGM undulator beamline at the ALS (invited)
TL;DR: The ALS beamline 7.0 as discussed by the authors is an integrated system for delivering radiation from a 5 cm period undulator to spectroscopy and microscopy experiments across the range of photon energies from 60 to 1200 eV.