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Wei Jia
Researcher at Taiyuan University of Technology
Publications - 10
Citations - 50
Wei Jia is an academic researcher from Taiyuan University of Technology. The author has contributed to research in topics: Light-emitting diode & Quantum well. The author has an hindex of 4, co-authored 10 publications receiving 38 citations. Previous affiliations of Wei Jia include Chinese Ministry of Education.
Papers
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Journal ArticleDOI
Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode
Dan Han,Shufang Ma,Jia Zhigang,Wei Jia,Peizhi Liu,Hailiang Dong,Lin Shang,Aiqin Zhang,Guangmei Zhai,Xuemin Li,Xuguang Liu,Bingshe Xu,Bingshe Xu +12 more
Journal ArticleDOI
The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate
TL;DR: In this article, the role of nucleation layer thickness on the GaN crystal quality grown on cone-patterned sapphire substrate (PSS) was explored, and the morphologies of epitaxial GaN at different growth stages were investigated by a series of growth interruption in detail.
Journal ArticleDOI
Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip
Dan Han,Shufang Ma,Jia Zhigang,Peizhi Liu,Wei Jia,Hailiang Dong,Lin Shang,Guangmei Zhai,Bingshe Xu +8 more
TL;DR: In this article, a micro-square array light-emitting diode (LED) chip (micro-chip) has been successfully fabricated by the focused ion beam (FIB) etching technique, which can reduce ohmic contact degradation in the fabrication process of three-dimensional (3D) structure devices.
Patent
GaN-based light-emitting diode structure improving light extraction rate and preparation method
Bingshe Xu,Lin Shang,Guangmei Zhai,Wei Jia,Shufang Ma,Jian Liang,Tianbao Li,Mei Fuhong,Jia Zhigang +8 more
TL;DR: In this article, a GaN-based light-emitting diode structure improving the light extraction rate and a preparation method is proposed to solve the technical problems that the carrier concentration of a P-type area of an existing LED structure is not high, currents are distributed unevenly, and the light emitting efficiency is low.
Journal ArticleDOI
Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips.
TL;DR: Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases, and the mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain.