Zinc oxide can be called a multifunctional material thanks to its unique physical and chemical properties. The first part of this paper presents the most important methods of preparation of ZnO divided into metallurgical and chemical methods. The mechanochemical process, controlled precipitation, sol-gel method, solvothermal and hydrothermal method, method using emulsion and microemulsion enviroment and other methods of obtaining zinc oxide were classified as chemical methods. In the next part of this review, the modification methods of ZnO were characterized. The modification with organic (carboxylic acid, silanes) and inroganic (metal oxides) compounds, and polymer matrices were mainly described. Finally, we present possible applications in various branches of industry: rubber, pharmaceutical, cosmetics, textile, electronic and electrotechnology, photocatalysis were introduced. This review provides useful information for specialist dealings with zinc oxide.

Zinc Oxide-From Synthesis to Application: A Review.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Oxide semiconductor film and semiconductor device

We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. In contrast to other work in the literature, switching occurs in ambient conditions, and is not limited to the surface of the active material. We propose a switching mechanism driven by competing field-driven formation and current-driven destruction of filamentary conductive pathways. We demonstrate that conduction is dominated by trap assisted tunneling through noncontinuous conduction paths consisting of silicon nanoinclusions in a highly nonstoichiometric suboxide phase. We hypothesize that such nanoinclusions nucleate preferentially at internal grain boundaries in nanostructured films. Switching exhibits the pinched hysteresis I/V loop characteristic of memristive systems, and on/off resistance ratios of 104:1 or higher can be easily achieved. Scanning tunneling microscopy suggests that switchable conductive pathways are 10 nm in diameter or smaller. Programming currents can be as low as 2 μA, and transition times are on the nanosecond scale.

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Resistive switching in silicon suboxide films

Cuprous oxide (Cu(2)O) and cupric oxide (CuO) nanowires have started playing important roles in energy conversion devices and optoelectronic devices. Although the desired advanced properties have been demonstrated, these materials cannot yet be produced in large-bulk quantities in order to bridge the technological transfer gap for wider use. In this respect, the quest for the most efficient synthesis process which yields not only large quantities but also high quality and advanced material properties continues. This paper gives an extensive review of copper oxide nanowire (NW) synthesis by all methods and routes by which various researchers have obtained their nanomaterial. These methods are critically overviewed, evaluated and compared. Methods of copper oxide NW growth include wet-chemical methods based on pure solution growth, electrochemical and hydrothermal routes as well as thermal and plasma oxidation methods. In terms of advanced nanowire synthesis, the fast thermal method or direct plasma oxidation as well as the combined hybrid wet-chemical method in which copper hydroxide NWs are produced and sequentially transformed by plasma oxidation which produces Cu(2)O NWs are seen as the most promising methods to explore in the near future. These methods not only yield large quantities of NWs, but produce high quality material with advanced properties.

https://iopscience.iop.org/article/10.1088/0957-4484/23/19/194001/pdf

Copper oxide nanowires: a review of growth.

Metal-contact-induced degradation and escape of volatile species from perovskite solar cells necessitate excellent diffusion barrier layers. We show that metal-induced degradation limits thermal stability in several perovskite chemistries with Au, Cu, and Ag gridlines even when the metal is separated from the perovskite by a layer of indium tin oxide (ITO). Channels in a sputtered ITO layer that align with perovskite grain boundaries are pathways for metal and halide diffusion into or out of the perovskite. Planarizing the perovskite morphology with a spin-cast organic charge-transport layer results in a subsequently deposited ITO layer that is uniform and impermeable. We show that it is critical to seal the edges of the active layers to prevent escape of volatile species. We demonstrate 1000 h thermal stability at 85 °C in CH3NH3PbI3 solar cells with complete-coverage silver contacts. Our barrier layer design enables long-term thermal stability of perovskite solar cells, a critical step to commercialization.

Barrier Design to Prevent Metal-Induced Degradation and Improve Thermal Stability in Perovskite Solar Cells

Study of Pt catalyst on graphene and its application to fuel cell

Indium tin oxide (ITO) thin films have been proposed as diffusion barriers for ultralarge scale integrated microelectronic devices. High-resolution transmission electron microscopy and electron diffraction showed that in the Cu/ITO/Si film, the 10 nm thick nanocrystalline ITO film layer works effectively as a barrier. Transmission electron microscopy, scanning electron microscopy, sheet resistance measurement, X-ray diffraction, and energy dispersive spectroscopy analyses revealed that ITO was found to be a good diffusion barrier against Cu at least up to 650°C. The failure temperature of ITO films diffusion barrier (10 nm) was 700°C. Our results show that ITO film can be considered as diffusion barriers for Cu metallization.

Wei-Long Liu

Papers

Study of Pt catalyst on graphene and its application to fuel cell

ITO as a Diffusion Barrier Between Si and Cu

Interfacial reactions of electroless nickel thin films on silicon

Preparation of nanosized ZnO using α brass

Effect of nickel on the initial growth behavior of electroless Ni–Co–P alloy on silicon substrate