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Weichuan Huang
Researcher at University of Science and Technology of China
Publications - 34
Citations - 869
Weichuan Huang is an academic researcher from University of Science and Technology of China. The author has contributed to research in topics: Ferroelectricity & Magnetization. The author has an hindex of 16, co-authored 34 publications receiving 592 citations. Previous affiliations of Weichuan Huang include South China Normal University.
Papers
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Journal ArticleDOI
Sub-nanosecond memristor based on ferroelectric tunnel junction.
Chao Ma,Zhen Luo,Weichuan Huang,Letian Zhao,Qiaoling Chen,Yue Lin,Xiang Liu,Zhiwei Chen,Chuanchuan Liu,Haoyang Sun,Xi Jin,Yuewei Yin,Xiaoguang Li +12 more
TL;DR: A high performance memristor based on a Ag/BaTiO3 /Nb:SrTiO 3 ferroelectric tunnel junction with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs.
Journal ArticleDOI
Ultrahigh Energy Density in SrTiO3 Film Capacitors
TL;DR: Interestingly, the Eb under positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm3 with a high efficiency of 89% is realized and the enhanced Eb may be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface.
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Ferroelectric Control of Organic/Ferromagnetic Spinterface.
Shiheng Liang,Hongxin Yang,Huaiwen Yang,Bingshan Tao,Abdelhak Djeffal,Mairbek Chshiev,Weichuan Huang,Xiaoguang Li,Anthony Ferri,Rachel Desfeux,Stéphane Mangin,Daniel Lacour,Michel Hehn,O. Copie,Karine Dumesnil,Yuan Lu +15 more
TL;DR: In this paper, the spin-polarization of the polyvinylidene fluoride (PVDF)/Co spinterface can be actively controlled by tuning the ferroelectric polarization of PVDF.
Journal ArticleDOI
Solid-State Synapse Based on Magnetoelectrically Coupled Memristor.
Weichuan Huang,Yue-Wen Fang,Yuewei Yin,Yuewei Yin,Bobo Tian,Wenbo Zhao,Chuangming Hou,Chao Ma,Qi Li,Evgeny Y. Tsymbal,Chun-Gang Duan,Chun-Gang Duan,Xiaoguang Li +12 more
TL;DR: Density functional theory calculations are carried out to describe the obtained magnetoelectric coupling, which is probably related to the Mn-Ti intermixing at the interfaces, which will be conducive to the development of artificial intelligence.