Neuromorphic computing is a promising alternative to conventional computing systems as it could enable parallel computation and adaptive learning process. However, the development of energy efficient neuromorphic hardware systems has been hindered by the limited performance of analog synaptic devices. Here, we demonstrate the analog conductance modulation behavior in the ferroelectric thin-film transistors (FeTFT) that have the nanoscale ferroelectric material and oxide semiconductors. Accurate control of polarization changes in the nanoscale ferroelectric layer induces conductance modulation to demonstrate linear potentiation and depression characteristics of FeTFTs. Our devices show potentiation and depression properties, including high linearity, multiple states, and small cycle-to-cycle/device-to-device variations. In simulations with measured properties, a neuromorphic system with FeTFT achieves 91.1% recognition accuracy of handwritten digits. This work may provide a way to realize the neuromorphic hardware systems that use FeTFTs as the synaptic devices.

Ferroelectric Analog Synaptic Transistors

PURPOSE: A resistive random access memory device is provided to prevent sneak path problem by using a thin film structure which directly connects a bi-directional switching layer on a resistance change layer. CONSTITUTION: A first electrode(10) is formed on a thin film layer(20). The thin film layer includes a resistance change layer and a switching layer which are connected with each other. The resistance change layer includes materials with bipolar resistance switching characteristics. The switching layer includes materials with bi-directional switching characteristics. The thin film layer is formed on a second electrode(30).

Resistance random access memory

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on (001) Nb-doped SrTiO3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p-type semiconductor and formed a p-n heterojunction with an n-type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5×104. Reverse C-V characteristics exhibited a linear 1∕C2 versus V plot, from which a built-in potential of 0.6V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics.

http://absimage.aps.org/image/MAR08/MWS_MAR08-2007-000520.pdf

Rectifying Current-Voltage Characteristics of BiFeO$_{3}$/Nb-doped SrTiO$_{3}$ Heterojunction

Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.

Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier

Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 103 A cm−2. The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems. Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions.

/pdf/sub-nanosecond-memristor-based-on-ferroelectric-tunnel-4bfo24uqvy.pdf

Sub-nanosecond memristor based on ferroelectric tunnel junction.

Polymer-based dielectric materials play a key role in advanced electronic devices and electric power systems. Although extensive research has been devoted to improve their energy-storage performances, it is a great challenge to increase the breakdown strength of polymer nanocomposites in terms of achieving high energy density and good reliability under high voltages. Here, a general strategy is proposed to significantly improve their breakdown strength and energy storage by adding negatively charged Ca2 Nb3 O10 nanosheets. A dramatically enhanced breakdown strength (792 MV m-1 ) and the highest energy density (36.2 J cm-3 ) among all flexible polymer-based dielectrics are observed in poly(vinylidene fluoride)-based nanocomposite capacitors. The strategy generalizability is verified by the similar substantial enhancements of breakdown strength and energy density in polystyrene-based nanocomposites. Phase-field simulations demonstrate that the further enhanced breakdown strength is ascribed to the local electric field, produced by the negatively charged Ca2 Nb3 O10 nanosheets sandwiched with the positively charged polyethyleneimine, which suppresses the secondary impact-ionized electrons and blocks the breakdown path in nanocomposites. The results demonstrate a new horizon of high-energy-density flexible capacitors.

Negatively Charged Nanosheets Significantly Enhance the Energy-Storage Capability of Polymer-Based Nanocomposites

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

Flexible ferroelectric devices have been a hot-spot topic because of their potential wearable applications as nonvolatile memories and sensors. Here, high-quality (111)-oriented BiFeO3 ferroelectri...

Zhen Luo

Papers

Negatively Charged Nanosheets Significantly Enhance the Energy-Storage Capability of Polymer-Based Nanocomposites

Sub-nanosecond memristor based on ferroelectric tunnel junction.

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

BiFeO3-Based Flexible Ferroelectric Memristors for Neuromorphic Pattern Recognition

A flexible BiFeO3-based ferroelectric tunnel junction memristor for neuromorphic computing