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Weihong Gao

Researcher at Harbin Institute of Technology

Publications -  25
Citations -  581

Weihong Gao is an academic researcher from Harbin Institute of Technology. The author has contributed to research in topics: Diffusionless transformation & Alloy. The author has an hindex of 12, co-authored 24 publications receiving 377 citations. Previous affiliations of Weihong Gao include National Institute for Materials Science & Guangdong University of Technology.

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Tellurium doped n-type Zintl Zr3Ni3Sb4 thermoelectric materials: Balance between carrier-scattering mechanism and bipolar effect

TL;DR: In this article, a relatively good ZT of ∼0.6 was achieved by Te doping on the Sb site, which can be attributed to the combination of high majority-carrier concentration and enlarged band gap.
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Mechanical properties of nanostructured thermoelectric materials α-MgAgSb

TL;DR: In this article, a detailed study on the mechanical properties of nanostructured α-MgAgSb is presented, where the Young's modulus, nanoindentation hardness, compressive strength, and fracture toughness are compared with other p-type thermoelectric materials.
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The microscopic origin of low thermal conductivity for enhanced thermoelectric performance of Yb doped MgAgSb

TL;DR: In this article, the authors investigated the microscopic mechanism of low lattice thermal conductivity for α-MgAgSb using density functional theory (DFT) calculations and showed that a large number of optical branches, weak chemical bonding, and strong anharmonic coupling between longitudinal acoustic (LA) and longitudinal optical (LO) branches contribute to the low κlat.
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Extraordinary Thermoelectric Performance Realized in Hierarchically Structured AgSbSe2 with Ultralow Thermal Conductivity.

TL;DR: The high thermoelectric performance of Ca-doped AgSbSe2 with a hierarchical microstructure using a facile approach, namely, mechanical alloying (for only 30 min) and a quick hot-pressing method highlights AgSBSe2-based materials as robust thermoeLECTric candidates for energy harvesting.
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The influence of doping sites on achieving higher thermoelectric performance for nanostructured α-MgAgSb

TL;DR: In this article, the effect of doping site on the carrier transport behavior of nanostructured α-MgAgSb was investigated, and it was demonstrated that Ca doping on the Mg site leads to higher mobility and power factor in comparison with doping on Sb site, originated from the less introduced perturbation to valence band upon doping.