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Weiping Bai
Researcher at University of California, Berkeley
Publications - 1
Citations - 19
Weiping Bai is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Electron mobility & Dielectric. The author has an hindex of 1, co-authored 1 publications receiving 19 citations.
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Molybdenum metal gate MOS technology for post-SiO/sub 2/ gate dielectrics
Qiang Lu,R. Lin,Pushkar Ranade,Yee-Chia Yeo,Xiaofan Meng,Hideki Takeuchi,Tsu-Jae King,Chenming Hu,Hongfa Luan,Songjoo Lee,Weiping Bai,Choong-Ho Lee,Dim-Lee Kwong,Xin Guo,Xiewen Wang,Tso-Ping Ma +15 more
TL;DR: Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated and good device characteristics were obtained in all cases Thermodynamic stability of Mo on Si/sub 3/N/sub 4/, ZrO/sub 2/ and ZrSiO/Sub 4/ was verified by good carrier mobility agreement with the universal mobility model as mentioned in this paper.