Showing papers by "Wen-Yan Yin published in 2002"
TL;DR: In this paper, a direct integral equation for describing the current on the multiple perfectly conducting strips in cylindrical geometries for an E-polarization plane wave of normal incidence was formulated.
Abstract: The direct integral equation is formulated for describing the current on the multiple perfectly conducting strips in cylindrical geometries for an E-polarization plane wave of normal incidence. By using the Galerkin's method, the surface currents on the conducting strips are expanded in the form of a series of Chebyshev polynomials of the first kind, while the unknown expanding coefficients are solved by a set of matrix equations of finite order with a fast convergence rate and a high accuracy. Furthermore, numerical results are presented to demonstrate the variation of the penetrated near-zone field in the presence of one, two, three, four and six cylindrical apertures, and the hybrid effects of both aperture number and aperture angular widths on the penetrated fields are investigated in detail.
13 citations
TL;DR: In this paper, a behavioral model for spiral inductors is presented based on the curve fitting technique, and the inductance of spiral inductor with an acceptable accuracy up to their first resonance frequencies is obtained.
Abstract: Extensive experimental results for various square spiral inductors on GaAs substrate are presented in this paper. Through detailed studies of the inductances extracted from the de-embedded on-chip measured S-parameters, the relationships between the electrical characteristics and the geometrical parameters of the spiral inductors are revealed. Based on the curve fitting technique, a behavioral model for spiral inductors is obtained and presented. Thus, the inductances of spiral inductors with an acceptable accuracy up to their first resonance frequencies are obtained.
4 citations
TL;DR: An improved equivalent lumped-element circuit model for predicting the transmission characteristics of spiral inductors is presented in this article, which can simulate the forward transmission coefficient more accurately than the traditional model.
Abstract: An improved equivalent lumped-element circuit model for predicting the transmission characteristics of spiral inductors is presented in this Letter. The improved model can simulate the forward transmission coefficient more accurately than the traditional model. By adding a shunt RC arm, the effects of the substrate, which become dominant at high frequencies, are well taken into account. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 35–37, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10365
4 citations
07 Aug 2002
TL;DR: In this paper, the effect of strip length and inner empty area on the coupling capacitance and resonant frequency of single-and double-level inductors on silicon substrates is investigated.
Abstract: Detailed experimental investigations are carried out in this paper to show the inductance, Q-factor as well as resonant frequency of on-chip square single- and double-level inductors on silicon substrates. Based on the equivalent circuit model developed and the S-parameters measured using a de-embedding technique, inductances, Q-factors and resonant frequencies of these inductors are determined and compared with one another. Parametric studies are carried out to show the effects of both strip length and inner empty area on the coupling capacitance and resonant frequency of these inductors, and some scalable formulas are derived for extrapolating inductance and resonant frequency of other inductors. It is demonstrated that in the double-level cases very strong self-inductor resonance can take place with lower resonant frequency, and Q-factor is degraded rapidly.
3 citations
17 Aug 2002
TL;DR: In this paper, a comparative experimental investigation on various on-chip GaAs MESFETs is performed, where the measured and simulated results are in good agreement in different device operation regions.
Abstract: A comparative experimental investigation on various on-chip GaAs MESFETs is performed. These MESFETs are fabricated using the same technology, but with different finger number and gate width, respectively. From this comparison, a scalable drain-source current model with respect to MESFETs' different finger number and gate width is deduced and verified with the measurement results. It is shown that the measured and simulated results are in good agreement in different device operation regions. Parametric studies are also performed and the generalised relationships between all parasitic element values and MESFETs' configurations are obtained based on the fabricating technology of the measured on-chip GaAs MESFETs.