Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocat...

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling-bond-free surface will interact with another through vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through non-covalent interactions. We present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing and contrasting with all-2D vdW heterostructures as well as with competing conventional technologies, we highlight the challenges and opportunities for mixed-dimensional vdW heterostructures.

Mixed-dimensional van der Waals heterostructures

Metasurfaces: From microwaves to visible

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Design Of Analog Cmos Integrated Circuits

An improved one-step leapfrog alternating direction implicit finite difference time domain (leapfrog ADI-FDTD) method is proposed for simulating graphene-based filters operating at THz band, with the Drude model of monolayer graphene and associated auxiliary differential equation (ADE) technique implemented. Numerical results show that the S-parameters of the filter can be adjusted effectively by changing the chemical potential as well as layer number of graphene patch.

Modeling tunable graphene-based filters using leapfrog ADI-FDTD method

Computational study of nanopillar Si/poly (3,4-ethylene dioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) heterojunction solar cell is performed by using finite element method to solve Poisson equation, drift-diffusion equations, and current continuity equations. The depletion width around the edge of the Si nanopillar is almost the same as that of planar junction, while the depletion width around the middle of the Si nanopillar is much wider than that of planar junction. As a result, besides the enhanced light absorption due to light trapping induced by nanopillar array as in previous studies, larger depletion region, which leads to higher electron-hole separation efficiency under light illumination, is another reason for short-circuit current increase of nanopillar solar cell. The reason for less open-circuit voltage of nanopillar solar cell is also clarified by explaining the reason for large dark current of the nanopillar solar cell compared to its planar structure counterpart as follows. The kink of the potential profile along the lines around the edge nanopillar leads to much sharper potential drop in the following depletion region, and results in greater hole density slope when the solar cells are forwarded biased. Since the Si/PEDOT:PSS behaves like a pn junction rather than a Schottky junction as clarified in the previous study and the PEDOT:PSS is much highly doped, nanopillar heterojunction has larger dark current than planar junction due to the larger hole diffusion current around Si nanopillar edge.

Carrier Dynamics of Nanopillar Textured Ultrathin Si Film/PEDOT:PSS Heterojunction Solar Cell

The integral equations describing the common current (CM) along twisted-wire pairs (TWPs) above a ground plane are derived. It is shown that the CM current along TWPs is approximately equal to the one generated by a wire above a ground plane with equivalent radius. In addition, it is verified that the near field radiated by both TWPs and one wire above the ground are also “identical”. The analytical results provide a general proof to the CM equivalent circuit that was developed only under engineering guess. Moreover, the obtained results are validated by using the commercial software FEKO and good agreements are obtained.

On the Evaluation of the Common-Mode Current Along Twisted-Wire-Pairs

In this paper, numerical investigation on GaN HFETs is carried out using hybrid finite element method (FEM) which combines the FEM with the preconditioned conjugated gradient technique. The maximum temperatures of the HFETs operating under continuous-waves (CW) and pulsed-waves (PW) are both captured accurately. The effects of temperature- dependent thermal conductivities of the materials on the temperature distribution are also studied and compared for different substrate materials, such as sapphire, silicon, and SiC.

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

An equivalent distributed circuit model of a double- walled carbon nanotube (DWCNT) is proposed in this paper. The comparison in time delay is made between double- and single- walled carbon nanotube (SWCNT) interconnects at different technology levels, such as local, intermediate and global levels. It is shown that using DWCNT the reduction of time delay, as much as 15% to 25% for intermediate and global interconnects, can be expected. Such improvement could be even better as the carbon nanotube(CNT) diameters increase, which offers potential applications in future interconnects.

Wen-Yan Yin

Papers

Modeling tunable graphene-based filters using leapfrog ADI-FDTD method

Carrier Dynamics of Nanopillar Textured Ultrathin Si Film/PEDOT:PSS Heterojunction Solar Cell

On the Evaluation of the Common-Mode Current Along Twisted-Wire-Pairs

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Circuit Modeling and Time Delay Analysis of Double-Walled Carbon Nanotube Interconnects