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Wen-Yan Yin
Researcher at Zhejiang University
Publications - 582
Citations - 8641
Wen-Yan Yin is an academic researcher from Zhejiang University. The author has contributed to research in topics: Finite-difference time-domain method & Equivalent circuit. The author has an hindex of 39, co-authored 573 publications receiving 7237 citations. Previous affiliations of Wen-Yan Yin include Xi'an Jiaotong University & Shanghai Jiao Tong University.
Papers
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Characterization of Near-Field Coupling Effects From Complicated Three-Dimensional Structures in Rectangular Cavities Using Fast Integral Equation Method
Kai Yang,Cheng Ning,Wen-Yan Yin +2 more
TL;DR: In this paper, the frequency domain near-field coupling effects from complicated three-dimensional transmission lines, monopole/dipole radiators, and printed circuit boards (PCBs) located in a metallic rectangular cavity with an efficient iterative fast Fourier transform-accelerated integral-equation method were analyzed.
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Transfer Function and Compact Distributed Rlc Models of Carbon Nanotube Bundle Interconnets and Their Applications
Jiang-Peng Cui,Wen-Yan Yin +1 more
TL;DR: In this paper, the authors derived transfer function using difierent orders of approximation, stability and signal transmission analysis of a driven metallic single-walled carbon nanotube (SWCNT) bundle interconnect.
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Magnetic Metamirrors as Spatial Frequency Filters
TL;DR: In this article, a magnetic metamirror with symmetric split-ring resonators, which can achieve short circuit for normally incident wave and impedance matching for obliquely incident wave, is fabricated and investigated.
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Design Considerations for Si- and Ge-Stacked Nanosheet pMOSFETs Based on Quantum Transport Simulations
Shuo Zhang,Jun Z. Huang,Hao Xie,Afshan Khaliq,Da-Wei Wang,Wenchao Chen,Kai Miao,Hongsheng Chen,Wen-Yan Yin +8 more
TL;DR: In this paper, the design of vertically stacked horizontal nanosheet (NSH) gate-all-around pMOSFETs is examined at the sub-5-nm technology node using in-house-developed non-equilibrium Green's function (NEGF) quantum transport simulator.
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A Wideband Model for On-Chip Interconnects With Different Shielding Structures
TL;DR: In this paper, a wideband model for on-chip interconnects with different shielding structures is proposed, based on the transmission line theory and electromagnetic wave theory, and many parasitic effects such as eddy current, skin effect, proximity effect, and substrate loss have been taken into consideration.