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Werner Bächtold
Researcher at ETH Zurich
Publications - 106
Citations - 1677
Werner Bächtold is an academic researcher from ETH Zurich. The author has contributed to research in topics: Monolithic microwave integrated circuit & Amplifier. The author has an hindex of 22, co-authored 106 publications receiving 1597 citations. Previous affiliations of Werner Bächtold include École Polytechnique Fédérale de Lausanne.
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Journal ArticleDOI
Varactor-loaded transmission-line phase shifter at C-band using lumped elements
TL;DR: In this paper, a varactor-loaded transmission-line phase shifter using lumped elements is discussed and a monolithic-microwave integrated circuit (MMIC) is fabricated to verify the proposed topology.
Proceedings ArticleDOI
A 5.2 GHz variable gain LNA MMIC for adaptive antenna combining
TL;DR: In this article, a variable gain LNA was designed for HIPERLAN I. A noise figure of only 1.7 dB was measured at a gain of 14.5 dB and a power consumption of 9 mW.
Journal ArticleDOI
Study and Design Optimization of Multiharmonic Transmission-Line Load Networks for Class-E and Class-F $K$ -Band MMIC Power Amplifiers
TL;DR: In this paper, a design-oriented analysis of microwave transmission-line class-E and class-F amplifiers is presented in a multiharmonic transmission line load networks are analyzed and compared in terms of harmonic suppression and their effects on output power and efficiency.
Journal ArticleDOI
Calibratable adaptive antenna combiner at 5.2 GHz with high yield for laptop interface card
TL;DR: In this article, a calibrated adaptive antenna combiner with three branches for high-performance radio local area network at 5.2 GHz is presented, which consists of a bent stacked slot antenna, a low-noise-amplifier monolithic microwave integrated circuit (MMIC), and a vector modulator MMIC with an amplitude control range of 15 dB and 3600 phase control range.
Journal ArticleDOI
Investigation of the cleaved surface of a p–i–n laser using Kelvin probe force microscopy and two-dimensional physical simulations
TL;DR: In this article, the cross-sectional electric field and potential distribution of a cleaved n+-InP/InGaAsP/p+-inP p-i-n laser diode using Kelvin probe force microscopy (KFM) with a lateral resolution reaching 50 nm was investigated.