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Wilfried Favre
Researcher at Laboratoire de Génie Electrique et Electronique de Paris
Publications - 17
Citations - 179
Wilfried Favre is an academic researcher from Laboratoire de Génie Electrique et Electronique de Paris. The author has contributed to research in topics: Heterojunction & Silicon. The author has an hindex of 8, co-authored 13 publications receiving 156 citations. Previous affiliations of Wilfried Favre include Supélec.
Papers
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Journal ArticleDOI
Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions
Olga Maslova,José Alvarez,E.V. Gushina,Wilfried Favre,Marie-Estelle Gueunier-Farret,Alexander S. Gudovskikh,A.V. Ankudinov,E. I. Terukov,Jean-Paul Kleider +8 more
TL;DR: In this paper, a probe atomic force microscopy was used to examine two-dimensional electron and hole gases due to strong inversion layers at the c-Si surface in agreement with previous planar conductance measurements.
Journal ArticleDOI
Influence of a-Si:H/ITO Interface Properties on Performance of Heterojunction Solar Cells☆
Raphaël Lachaume,Wilfried Favre,P. Scheiblin,Xavier Garros,Nathalie Nguyen,Jean Coignus,Delfina Muñoz,Gilles Reimbold +7 more
TL;DR: In this article, the influence of the contact properties between Indium Tin oxide (ITO) and hydrogenated amorphous Silicon (a-Si:H) on the performance of a-SiH/c-Si HeteroJunction (HJ) solar cells was investigated.
Journal ArticleDOI
Understanding inversion layers and band discontinuities in hydrogenated amorphous silicon/crystalline silicon heterojunctions from the temperature dependence of the capacitance
Olga Maslova,Aurore Brézard-Oudot,Marie-Estelle Gueunier-Farret,José Alvarez,Wilfried Favre,D. Munoz,Jean-Paul Kleider +6 more
TL;DR: In this article, the temperature dependence of the capacitance of very high efficiency silicon heterojunction solar cells exhibits an anomalously large increase with temperature that cannot be explained under the usual depletion approximation.
Characterization of silicon heterojunctions for solar cells
Jean-Paul Kleider,José Alvarez,A.V. Ankudinov,Alexander S. Gudovskikh,E.V. Gushina,M. Labrune,Olga Maslova,Wilfried Favre,Marie-Estelle Gueunier-Farret,Pere Roca i Cabarrocas,E. I. Terukov +10 more
TL;DR: In this paper, the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) was revealed.
Journal ArticleDOI
Influence of the amorphous/crystalline silicon heterostructure properties on planar conductance measurements
TL;DR: In this paper, a quasi-analytical calculation of the heterojunction between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at equilibrium is presented.