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William M. Holber
Researcher at IBM
Publications - 20
Citations - 620
William M. Holber is an academic researcher from IBM. The author has contributed to research in topics: Electron cyclotron resonance & Plasma. The author has an hindex of 12, co-authored 20 publications receiving 618 citations.
Papers
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Patent
Etching of silicon dioxide selectively to silicon nitride and polysilicon
Michael S. Barnes,John H. Keller,William M. Holber,Tina J. Cotler,Jonathan D. Chapple-Sokol,Dragan Valentin Podlesnik +5 more
TL;DR: In this paper, a hydrogen halide plasma is created within an etch chamber and the negative charge at the bottom of the chamber attracts the positively charged plasma, thereby etching the substrate in the downward direction.
Journal ArticleDOI
Copper deposition by electron cyclotron resonance plasma
William M. Holber,Joseph S. Logan,H. J. Grabarz,J. T. C. Yeh,John Caughman,A. Sugerman,F. E. Turene +6 more
TL;DR: In this paper, an electron cyclotron resonance plasma reactor has been built in order to study the filling of high aspect ratio features on semiconductor devices with metal, and a simple model is derived to explain the fill characteristics.
Patent
Method of plasma etching silicon dioxide, selectively to silicon nitride and polysilicon
Michael S. Barnes,William M. Holber,Jonathan D. Chapple-Sokol,John H. Keller,Tina J. Cotler,Dragan Valentin Podlesnik +5 more
TL;DR: In this article, a hydrogen halide plasma is created within an etch chamber and the negative charge at the bottom of the chamber attracts the positively charged plasma, thereby etching the substrate in the downward direction.
Patent
Method and apparatus for filing high aspect patterns with metal
TL;DR: In this paper, the authors describe an electron cyclotron resonance plasma heating apparatus system and process in which microwave energy is transmitted directly in an axial direction through an evacuated chamber to generate energetic electrons.
Journal ArticleDOI
GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma
Z. Lu,Michael Schmidt,D. Chen,Richard M. Osgood,William M. Holber,D. V. Podlesnik,John C. Forster +6 more
TL;DR: The surface chemistry of GaAs−oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy as mentioned in this paper.