Core/Shell Nanoparticles: Classes, Properties, Synthesis Mechanisms, Characterization, and Applications

Colloidal core/shell nanocrystals contain at least two semiconductor materials in an onionlike structure. The possibility to tune the basic optical properties of the core nanocrystals, for example, their fluorescence wavelength, quantum yield, and lifetime, by growing an epitaxial-type shell of another semiconductor has fueled significant progress on the chemical synthesis of these systems. In such core/shell nanocrystals, the shell provides a physical barrier between the optically active core and the surrounding medium, thus making the nanocrystals less sensitive to environmental changes, surface chemistry, and photo-oxidation. The shell further provides an efficient passivation of the surface trap states, giving rise to a strongly enhanced fluorescence quantum yield. This effect is a fundamental prerequisite for the use of nanocrystals in applications such as biological labeling and light-emitting devices, which rely on their emission properties. Focusing on recent advances, this Review discusses the fundamental properties and synthesis methods of core/shell and core/multiple shell structures of II-VI, IV-VI, and III-V semiconductors.

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Core/Shell semiconductor nanocrystals.

Graham H. Carey,† Ahmed L. Abdelhady,‡ Zhijun Ning, Susanna M. Thon, Osman M. Bakr,‡ and Edward H. Sargent*,† †Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario M5S 3G4, Canada ‡Division of Physical Sciences and Engineering, Solar & Photovoltaics Engineering Center, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia School of Physical Science and Technology, ShanghaiTech University, 100 Haike Road, Shanghai 201210, China Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland 21218, United States

Colloidal Quantum Dot Solar Cells.

BACKGROUND The Information Age was founded on the semiconductor revolution, marked by the growth of high-purity semiconductor single crystals. The resultant design and fabrication of electronic devices exploits our ability to control the concentration, motion, and dynamics of charge carriers in the bulk semiconductor solid state. Our desire to introduce electronics everywhere is fueled by opportunities to create intelligent and enabling devices for the information, communication, consumer product, health, and energy sectors. This demand for ubiquitous electronics is spurring the design of materials that exhibit engineered physical properties and that can enable new fabrication methods for low-cost, large-area, and flexible devices. Semiconductors, which are at the heart of electronics and optoelectronics, come with high demands on chemical purity and structural perfection. Alternatives to silicon technology are expected to combine the electronic and optical properties of inorganic semiconductors (high charge carrier mobility, precise n- and p-type doping, and the ability to engineer the band gap energy) with the benefits of additive device manufacturing: low cost, large area, and the use of solution-based fabrication techniques. Along these lines, colloidal semiconductor quantum dots (QDs), which are nanoscale crystals of analogous bulk semiconductor crystals, offer a powerful platform for device engineers. Colloidal QDs may be tailored in size, shape, and composition and their surfaces functionalized with molecular ligands of diverse chemistry. At the nanoscale (typically 2 to 20 nm), quantum and dielectric confinement effects give rise to the prized size-, shape-, and composition-tunable electronic and optical properties of QDs. Surface ligands enable the stabilization of QDs in the form of colloids, allowing their bottom-up assembly into QD solids. The physical properties of QD solids can be designed by selecting the characteristics of the individual QD building blocks and by controlling the electronic communication between the QDs in the solid state. These QD solids can be engineered with application-specific electronic and optoelectronic properties for the large-area, solution-based assembly of devices. ADVANCES The large surface-to-volume ratio of QDs places a substantial importance on the composition and structure of the surface in defining the physical properties that govern the concentration, motion, and dynamics of excitations and charge carriers in QD solids. Recent studies have shown pathways to passivate uncoordinated atoms at the QD surface that act to trap and scatter charge carriers. Surface atoms, ligands, and ions can serve as dopants to control the electron affinity of QD solids. Surface ligands and surrounding matrices control the barriers to electronic, excitonic, and thermal transport between QDs and between QDs and matrices. New ligand chemistries and matrix materials have been reported that provide freedom to control the dynamics of excitons and charge carriers and to design device interfaces. These advances in engineering the chemical and physical properties of the QD surface have been translated into recent achievements of high-mobility transistors and circuits, high-quantum-yield photodetectors and light-emitting devices, and high-efficiency photovoltaic devices. OUTLOOK The dominant role and dynamic nature of the QD surface, and the strong motive to build novel QD devices, will drive the exploration of new surface chemistries and matrix materials, processes for their assembly and integration with other materials in devices, and measurements and simulations with which to map the relationship between surface chemistry and materials and device properties. Challenges remain to achieve full control over the carrier type, concentration, and mobility in the QD channel and the barriers and traps at device interfaces that limit the gain and speed of QD electronics. Surface chemistries that allow for both long carrier lifetime and high carrier mobility and the freedom to engineer the bandgap and band alignment of QDs and other device layers are needed to exploit physics particular to QDs and to advance device architectures that contribute to improving the performance of QD optoelectronics. The importance of thermal transport in QD solids and their devices is an essential emerging topic that promises to become of greater importance as we develop QD devices.

http://science.sciencemag.org/content/sci/353/6302/aac5523.full.pdf

Building devices from colloidal quantum dots.

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminesce...

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

We report a two-step synthesis of highly luminescent CdS/ZnSe core/shell nanocrystals (emission quantum yields up to 50%) that can produce efficient spatial separation of electrons and holes between the core and the shell (type-II localization regime). Our synthesis involves fabrication of cubic-singony CdS core particles that are subsequently overcoated with a layer of ZnSe in the presence of surfactant-ligands in a noncoordinating solvent. Studies of different growth regime of the ZnSe shell indicate that one approach to obtaining high emission efficiencies is through alloying the CdS/ZnSe interface with CdSe, which leads to the formation of an intermediate ZnCdSe layer with a graded composition. We perform theoretical modeling of these core/shell nanocrystals using effective mass approximation and applying first-order perturbation theory for treating both direct electron-hole coupling and the core/shell interface-polarization effects. Using this model we determine the range of geometrical parameters of the core/shell structures that result in a type-II localization regime. We further applied this model to evaluate the degree of electron-hole spatial separation (quantified in terms of the electron-hole overlap integral) based on measured emission wavelengths. We also discuss the potential applicability of these nanocrystals in lasing technologies and specifically the possibility of single-exciton optical gain in type-II nanostructures.

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William O. Wallace

Papers

Type-II core/shell CdS/ZnSe nanocrystals: synthesis, electronic structures, and spectroscopic properties.