W
Wolfgang Göpel
Researcher at University of Tübingen
Publications - 412
Citations - 17769
Wolfgang Göpel is an academic researcher from University of Tübingen. The author has contributed to research in topics: X-ray photoelectron spectroscopy & Thin film. The author has an hindex of 69, co-authored 391 publications receiving 17271 citations. Previous affiliations of Wolfgang Göpel include Montana State University & Leibniz University of Hanover.
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SnO2 sensors: current status and future prospects☆
TL;DR: A survey on the current status and future prospects in research and development of SnO2-based sensors is given in this paper, where the influence of contact geometry and crystallinity on the sensor response signal is outlined.
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Fundamental and practical aspects in the design of nanoscaled SnO2 gas sensors : a status report
TL;DR: The present review describes the reasons for this complexity and outlines unifying concepts to understand the huge amount of published, mostly empirical data, which leads to a comprehension of gas-sensing phenomena in both the application and research domains.
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Oxide ion conducting solid electrolytes based on Bi2O3
TL;DR: In this paper, the structural properties, thermal expansion, electrical conductivity, thermodynamic stability, and surface properties of bismuth oxide and solid solutions with face centred cubic, rhombohedral, tetragonal or layer structures are reviewed.
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Surface defects of TiO2(110): A combined XPS, XAES AND ELS study
TL;DR: In this article, a defect-related gap state with mainly Ti3d contribution 0.3 eV below the conduction band edge was determined, and an additional auger peak at 5.3eV higher energy than the L 3 M 23 V transition of ideal surfaces without point defects was observed.
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Intrinsic defects of Ti O 2 (110): Interaction with chemisorbed O 2 , H 2 , CO, and C O 2
TL;DR: In this article, the surface and subsurface reactions involving intrinsic surface defects are separated from each other by analyzing the charge transfer model, which takes into account surface and bulk electronic states in the band gap attributed to the different defects formed during the interaction.