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Won Young Jeung

Researcher at Korea Institute of Science and Technology

Publications -  38
Citations -  263

Won Young Jeung is an academic researcher from Korea Institute of Science and Technology. The author has contributed to research in topics: Coercivity & Nanowire. The author has an hindex of 7, co-authored 38 publications receiving 252 citations. Previous affiliations of Won Young Jeung include United States Naval Research Laboratory & Kigali Institute of Science and Technology.

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On-film formation of bi nanowires with extraordinary electron mobility.

TL;DR: A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented, and four-terminal devices based on individual Bi nanwires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi Nanowires.
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Magnetotransport properties of an individual single-crystalline Bi nanowire grown by a stress induced method

TL;DR: In this paper, the magnetotransport properties of an individual crystalline Bi nanowire have been investigated in the range of 2-300 K using four-point measurements.
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A novel method to fabricate reinforced Ti composites by infiltration of Al (Mg) into porous titanium

TL;DR: In this article, a method to fabricate Ti composites with in-situ formed reinforcement was presented, where the porous Ti was prepared by a metal injection molding (MIM) process, and the pores in the Ti were filled with molten Al or Al-Mg.
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Microstructure and magnetic properties of electrodeposited CoPtP alloys

TL;DR: CoPtP alloys have been grown by electrochemical process in an external magnetic field in order to enhance the perpendicular magnetic properties as mentioned in this paper, and they exhibit significant perpendicular magnetic anisotropy and permanent magnetic properties in the perpendicular direction.
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Angle Sensors Based on Oblique Giant Magneto Impedance Devices

TL;DR: In this paper, a soft magnetic alloy of Co30Fe34Ni36 was electroplated on a Si wafer with a CoFeNi seed layer and V-shaped microwire patterns were formed using a conventional photolithography process.