There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Theoretical analysis of a novel dual gate metal–graphene nanoribbon field effect transistor

Effect addition of graphene on electrical conductivity and tensile strength for Recycled electric power transmission wires

Defect guided conduction in graphene-derivatives and MoS2: Two-dimensional nanomaterial models

The BC2 N which is one of the graphene-boron nitride nanocomposites is found to have tunable electronic properties besides having an analogous hexagonal structure with the graphene and boron nitride . To assure the capability of the BC 2 N nanowire (BC 2 NNW) in the nanoelectronics and optoelectronics applications, the analytical modelling has been carried out using MATLAB followed by the performance analysis in which the nature of the carrier statistic and the intrinsic velocity are discussed. The results show that the carrier concentration of the BC 2NNW is 7.143 × 107 m−1. Besides that, the intrinsic velocity of BC2NNW is dependent on the temperature in the non-degenerate regime while only dependent on the carrier concentration when entering the degenerate regime. Moreover, a comparable trend of the current-voltage (I-V) characteristics graph is obtained when compared with the published experimental result with an extracted subthreshold swing of 59.6mV/decade. These further assure the BC2N as one of the potential candidates in nanoelectronics and optoelectronics applications in the future.

Performance analysis of one dimensional BC 2 N for nanoelectronics applications

Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presented, and also based on the analytical model a numerical solution is reported. We begin by modeling the DOS, followed by carrier concentration as a function V in degenerate and nondegenerate regimes. To further confirm this viewpoint, the presented analytical model is compared with experimental data, and acceptable agreement is reported.

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Capacitance variation of electrolyte-gated bilayer graphene based transistors

This paper presents the study of the current-voltage characteristic of graphene nanoribbon based Schottky diode using analytical method. The work presents a simple model to analyse the current-voltage characteristic in the function of Schottky barrier properties such as the potential barrier and the Schottky barrier lowering effect of graphene nanoribbon contact. Thermionic emission effect and tunneling effect were considered in the development of the current-voltage characteristic. By using the analytical method, the analytical model for potential barrier, Schottky barrier lowering effect and the current-voltage characteristic of graphene nanoribbon Schottky diode are presented. Based on the obtained result, it is found that the potential barrier has a quadratic relationship relative to its depletion region width. Besides that, the Schottky barrier lowering effect is dependent on the applied voltage. Both of these two parameters, the potential barrier and the Schottky barrier lowering effect are temperature dependent. The presented current-voltage model was compared with silicon Schottky diode and germanium Schottky diode which shows different contact effect when different metal and semiconductor were used for Schottky contact. Moreover a comparison study between the presented model with experimental graphene Schottky diode shows that the presented model indicates similar leaning of the current-voltage characteristic with experimental work.

Contact effect on the current-voltage characteristic of graphene nanoribbon based schottky diode

The potential barrier of graphene nanoribbon based schottky diode

A two-dimensional honeycomb lattice of single layer of carbon called graphene is a very interesting material that exhibits high electron mobility at room temperature. This unique property holds a promising potential to replace current silicon technology in the future. However graphene is a gapless material which is a major problem in semiconductor economy. To overcome this problem graphene nanoribbon is introduced where the band-gap of graphene nanoribbon can be easily obtained by controlling the width of the ribbon. In this paper, schottky barrier lowering effect on graphene nanoribbon based schottky barrier diode is investigated. Schottky barrier effect alters the schottky barrier height and also the overall performance of schottky barrier diode. The study of the relationship between applied voltage and schottky barrier lowering effect for non-degenerate region and degenerate region is presented. As the applied voltage is increased, the schottky barrier lowering is also increasing but the increment only increases until certain point. After that, effect starts to decline due to the ambipolar characteristic of graphene nanoribbon. Degenerate region shows higher value of schottky barrier lowering compared to non-degenerate region is reported. Besides that, higher temperature value resulted in higher schottky barrier lowering effect is also reported.

Wong King Kiat

Papers

Capacitance variation of electrolyte-gated bilayer graphene based transistors

Contact effect on the current-voltage characteristic of graphene nanoribbon based schottky diode

The potential barrier of graphene nanoribbon based schottky diode

Schottky barrier lowering effect on graphene nanoribbon based schottky diode