A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.

High-voltage semiconductor component

A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxial layer. The terraced trench has a plurality of portions that differ in width to define at least one annular ledge therebetween. A barrier material is deposited along the walls of the trench. A dopant of a second conductivity type is implanted through the barrier material lining the annular ledge and said trench bottom and into adjacent portions of the epitaxial layer. The dopant is diffused to form at least one annular doped region in the epitaxial layer and at least one other region located below the annular doped region. A filler material is deposited in the terraced trench to substantially fill the trench, thus completing the voltage sustaining region. At least one region of the I second conductivity type is formed over the voltage sustaining region to define a junction therebetween.

Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands

A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing.

Trench mosfet with field relief feature

A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.

Power factor correction circuit with high-voltage semiconductor component

An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for the first time By adding one or several ODIs in the drift longitudinally equidistantly, the ODI-IGBT obtains a better electric field distribution than the field-stop IGBT (FS-IGBT) at OFF-state, which means a larger breakdown voltage Moreover, at inductive load turn off transient, its space charge region is wider along with the better electric field distribution Hence, less excess carriers are left when the anode voltage rises to the bus voltage That is, its current decaying time is smaller than FS-IGBT, so does the turn off loss Compared with the FS-IGBT in TSUPREM4 simulation, the ODI-IGBT can achieve a much lower turn off loss, which is only 52% of that of the FS-IGBT at the same breakdown voltage and same ON-state voltage In addition, the ODI-IGBT has a simpler manufacturing process and better immunity to process deviation than the super junction IGBT (SJ-IGBT)

The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss

A voltage-sustaining structure with embedded oppositely doped islands is proposed. Due to the compensation of the field induced by these regions, the doping density of the voltage-sustaining layer can be made larger than that in a conventional voltage-sustaining layer with the same breakdown voltage, and therefore the on-voltage can be reduced. The theory of design for such structures is found to be in good agreement with the results of full 2-dimensional simulation. The on-state performance, the transient behaviour and the potential applications of this structure in power devices are also discussed.

http://ieeexplore.ieee.org/iel5/2190/16993/00785301.pdf

X.B. Chen

Papers

High-voltage sustaining structure with embedded oppositely doped regions