Journal ArticleDOI
High-voltage sustaining structure with embedded oppositely doped regions
X.B. Chen,M.S. Towers,P. Mawby,K. Board +3 more
- Vol. 146, Iss: 2, pp 90-94
TLDR
In this paper, a voltage-sustaining structure with embedded oppositely doped islands is proposed, where the compensation of the field induced by these regions can be made larger than that in a conventional voltage sustaining layer with the same breakdown voltage, and therefore the on-voltage can be reduced.Abstract:
A voltage-sustaining structure with embedded oppositely doped islands is proposed. Due to the compensation of the field induced by these regions, the doping density of the voltage-sustaining layer can be made larger than that in a conventional voltage-sustaining layer with the same breakdown voltage, and therefore the on-voltage can be reduced. The theory of design for such structures is found to be in good agreement with the results of full 2-dimensional simulation. The on-state performance, the transient behaviour and the potential applications of this structure in power devices are also discussed.read more
Citations
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Patent
High-voltage semiconductor component
TL;DR: In this article, a block pn junction of a second conductivity type and a drain zone of the first one is shown to be variably so doped that near the first surface doping atoms of the second type predominate.
Patent
Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands
TL;DR: In this paper, a voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one terraced trench in the epitaxia.
Patent
Trench mosfet with field relief feature
TL;DR: A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage is described in this article, and a method for its manufacturing is described.
Patent
Power factor correction circuit with high-voltage semiconductor component
TL;DR: In this paper, a switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier and a semiconductor switch formed by a compensation device coupled in parallel with the Rectifier and the inductor.
Journal ArticleDOI
The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss
TL;DR: In this paper, an oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) was investigated for the first time by adding one or several ODIs in the drift longitudinally equidistantly.
References
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Journal ArticleDOI
AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP
Simon M. Sze,G. Gibbons +1 more
Journal ArticleDOI
Optimum doping profile for minimum ohmic resistance and high-breakdown voltage
TL;DR: In this article, the authors derived the optimum doping profile of a lightly doped layer that introduces the minimum series resistance and sustains a given junction breakdown voltage, which applies to a one-dimensional Schottky diode and qualitatively to the collector or drain doping profiles of transistors.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.
Proceedings ArticleDOI
Optimum design of power MOSFETs
P.L. Hower,T.M.S. Heng,C. Huang +2 more
TL;DR: In this article, three cell geometries (rectangle, square and hexagon) have been investigated using a lumped R ds model and it is demonstrated that for each geometry one can calculate a spacing of the p-well diffusions that minimizes R Ds.