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Xiaoxiong Wang
Researcher at Nanjing University of Science and Technology
Publications - 70
Citations - 1227
Xiaoxiong Wang is an academic researcher from Nanjing University of Science and Technology. The author has contributed to research in topics: Topological insulator & Dirac (software). The author has an hindex of 18, co-authored 68 publications receiving 962 citations. Previous affiliations of Xiaoxiong Wang include University of Illinois at Urbana–Champaign & Zhejiang University.
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Journal ArticleDOI
Gapped Electronic Structure of Epitaxial Stanene on InSb(111)
Caizhi Xu,Caizhi Xu,Yang-Hao Chan,Peng Chen,Peng Chen,Xiaoxiong Wang,Xiaoxiong Wang,David Flötotto,Joseph A. Hlevyack,Guang Bian,Sung-Kwan Mo,Mei-Yin Chou,Mei-Yin Chou,Mei-Yin Chou,Tai-Chang Chiang,Tai-Chang Chiang +15 more
TL;DR: In this paper, a single tin atomic layer akin to graphene is used as a substrate for a quantum spin Hall insulator, which shows a large gap of 0.44 eV well suited for room-temperature device operations.
Journal ArticleDOI
Elemental Topological Dirac Semimetal: α -Sn on InSb(111)
Caizhi Xu,Caizhi Xu,Yang-Hao Chan,Yige Chen,Peng Chen,Peng Chen,Xiaoxiong Wang,Xiaoxiong Wang,Catherine Dejoie,Man-Hong Wong,Joseph A. Hlevyack,Hyejin Ryu,Hae-Young Kee,Nobumichi Tamura,Mei-Yin Chou,Mei-Yin Chou,Mei-Yin Chou,Zahid Hussain,Sung-Kwan Mo,Tai-Chang Chiang,Tai-Chang Chiang +20 more
TL;DR: Using angle-resolved photoemission spectroscopy, 3D Dirac cones associated with bulk electronic states near the Fermi level are observed in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form.
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The evolution behavior of structures and photoluminescence of K-doped ZnO thin films under different annealing temperatures
TL;DR: In this article, 1 at.% K-doped ZnO thin films were prepared by sol-gel method on Si substrates and the evolution behavior of the structures and photoluminescence of these films under different annealing temperatures was deeply studied.
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Interfacial protection of topological surface states in ultrathin Sb films.
TL;DR: In this article, it was shown that spin-polarized gapless surface states in topological insulators can overlap and couple by quantum tunneling, resulting in a thickness-dependent gap at the Dirac point.
Journal ArticleDOI
Electronic size effects in three-dimensional nanostructures.
Pawel J. Kowalczyk,Pawel J. Kowalczyk,Ojas Mahapatra,Simon Brown,Guang Bian,Xiaoxiong Wang,Xiaoxiong Wang,Tai-Chang Chiang +7 more
TL;DR: It is shown that bismuth nanostructures form three-dimensional patterns governed by two-dimensional electronic effects and that both the vertical and the lateral dimensions of the structures strongly favor certain values and that the preferred widths are substantially different for each preferred height.