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Xiaozhong Zhang
Researcher at Tsinghua University
Publications - 100
Citations - 2013
Xiaozhong Zhang is an academic researcher from Tsinghua University. The author has contributed to research in topics: Magnetoresistance & Amorphous carbon. The author has an hindex of 21, co-authored 97 publications receiving 1858 citations. Previous affiliations of Xiaozhong Zhang include National Center for Electron Microscopy.
Papers
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Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives
TL;DR: In this article, a well-aligned ZnO nanowires were synthesized by simple physical vapor deposition using c-oriented ZNO thin films as substrates without catalysts or additives.
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A Simple Method To Synthesize Nanowires
Yingjiu Zhang,Nanlin Wang,Shang-Peng Gao,Rongrui He,Shu Miao,Jun O. Liu,Jing Zhu,Xiaozhong Zhang +7 more
TL;DR: In this paper, a simple method was proposed to synthesize one-dimensional nanoscale materials without metal catalysts, such as Si3N4, Ga2O3, and ZnO nanowires.
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Synthesis of Aluminum Nitride Nanowires from Carbon Nanotubes
TL;DR: In this paper, the growth mechanism of the AlN nanowires and the factors that allow a decrease in the synthesis temperature are discussed, as well as the properties of the single crystal form of AlN.
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A simple method to synthesize Si3N4 and SiO2 nanowires from Si or Si/SiO2 mixture
TL;DR: In this paper, it was found that the reactant gases (N2, Ar and NH3) affect the yields and morphologies of the products, and the metal catalysts are not necessary in growth of the Si3N4 and SiO2 nanowires.
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Geometrical enhancement of low-field magnetoresistance in silicon
Caihua Wan,Xiaozhong Zhang,Xiaozhong Zhang,Xili Gao,Xili Gao,Jimin Wang,Jimin Wang,Xinyu Tan,Xinyu Tan +8 more
TL;DR: It is shown that IMR in lightly doped silicon can be significantly enhanced through hole injection, and then tuned by an applied current to arise at low magnetic fields, and should be possible to integrate it with existing silicon devices and so aid the development of silicon-based magnetoelectronics.