Journal ArticleDOI
A simple method to synthesize Si3N4 and SiO2 nanowires from Si or Si/SiO2 mixture
Reads0
Chats0
TLDR
In this paper, it was found that the reactant gases (N2, Ar and NH3) affect the yields and morphologies of the products, and the metal catalysts are not necessary in growth of the Si3N4 and SiO2 nanowires.About:
This article is published in Journal of Crystal Growth.The article was published on 2001-12-01. It has received 117 citations till now. The article focuses on the topics: Nanowire & Amorphous solid.read more
Citations
More filters
Journal ArticleDOI
One dimensional nanostructured materials
TL;DR: In this paper, the authors focus on the science behind the synthesis and properties of the ODNS rather than the device fabrication, and discuss current research related to environment and toxicology effects and current challenges in this rapidly evolving field.
Journal ArticleDOI
Optical fiber nanowires and microwires: fabrication and applications
Gilberto Brambilla,Fei Xu,Peter Horak,Yongmin Jung,F. Koizumi,Neil P. Sessions,Elena Koukharenko,Xian Feng,Ganapathy Senthil Murugan,James S. Wilkinson,David J. Richardson +10 more
TL;DR: In this article, a review of the manufacturing of optical fiber nanowires is presented, with a particular emphasis on their applications, and a solution to optical degradation issues is presented.
Journal ArticleDOI
Inorganic Semiconductor Nanowires
Peidong Yang,Yiying Wu,Rong Fan +2 more
TL;DR: An overview of current research activities that center on nanowires whose lateral dimensions fall anywhere in the range of 1-200 nm can be found in this article, where a number of strategies for the hierarchical assembly of nanowire building blocks are discussed.
Journal ArticleDOI
Synthesis of silicon nitride nanowires directly from the silicon substrates
TL;DR: In this paper, the authors presented a method to synthesize high-density silicon nitride nanowires directly from the silicon substrates via a catalytic reaction under ammonia or hydrogen flow at 1200 °C.
Journal ArticleDOI
Optical properties of single-crystalline α-Si3N4 nanobelts
TL;DR: In this paper, the optical properties of single-crystalline α-Si3N4 nanobelts synthesized via catalyst-assisted pyrolysis of polymeric precursor were characterized by absorption, photoluminescence (PL) and photolumininescence excitation (PLE).
References
More filters
Journal ArticleDOI
Nanobeam mechanics: Elasticity, strength, and toughness of nanorods and nanotubes
TL;DR: In this paper, the Young's modulus, strength, and toughness of nanostructures are evaluated using an atomic force microscopy (AFM) approach. And the results showed that the strength of the SiC NRs were substantially greater than those found previously for larger SiC structures, and they approach theoretical values.
Journal ArticleDOI
Amorphous silica nanowires: Intensive blue light emitters
Dapeng Yu,Q. L. Hang,Y. Ding,Hongzhou Zhang,Z. G. Bai,Jing Jing Wang,Yinghua Zou,Wei Qian,Guangcheng Xiong,S. Q. Feng +9 more
TL;DR: In this article, a large-scale synthesis of silica nanowires (SiONWs) using an excimer laser ablation method was reported. The SiONWs emit stable and high brightness blue light at energies of 2.65 and 3.0 eV.
Journal ArticleDOI
Germanium Nanowire Growth via Simple Vapor Transport
Yiying Wu,Peidong Yang +1 more
TL;DR: Germanium nanowires are synthesized in bulk quantities and high purity using a simple vapor transport process as mentioned in this paper, and they have diameters ranging from 5 to 300 nm, and lengths up to hundreds micrometer.
Journal ArticleDOI
Si nanowires grown from silicon oxide
TL;DR: In this paper, a bulk-quantity Si nanowires have been synthesized by thermal evaporation of a powder mixture of silicon and SiO2, and it was shown that at the initial nucleation stage, silicon monoxide vapor was generated from the powder mixture and condensed on the substrate.
Journal ArticleDOI
Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism
TL;DR: Amorphous silicon nanowires (a-SiNWs) with an average diameter of ca. 20 nm were synthesized at about 950°C under an Ar/H2 atmosphere on a large area of a (111) Si substrate without supplying any gaseous or liquid Si sources.