Xiaozhong Zhang

TL;DR: In this paper, a diode-assisted GaAs-based magnetoresistance (MR) effect at room temperature was investigated and it was found that the introduction of diode effectively enhanced the MR effect of the GaAs device, and the MR increases with increasing the length/width ratio of the device.

TL;DR: Magnetoresistance of pure amorphous carbon thin films deposited by pulsed laser deposition at various deposition temperatures was studied in this paper, where the transport mechanism of all the samples follow Efros-Shklovskii variable range hopping model and the characteristics temperature decreasing from 2540k to 1290k and localization length increasing from 5.3nm to 10.7nm with increasing fraction of C(sp2) from 72% to 84%.

TL;DR: In this paper, the authors investigated the effect of the atmosphere relative humidity (RH) on the reverse bias I-V characteristics of a-C and n-Si heterojunctions.

TL;DR: In this paper, the authors reported an enhanced linear magnetoresistance in germanium at room temperature, which is attributed to surface imperfection, which cannot only increase the recombination rate but also enhance the inhomogeneity.

TL;DR: Amorphous carbon thin films with a negative magnetoresistance (MR) of 13% and a positive MR of 31% at 2 K under a magnetic field of 7 T were fabricated through chemical vapor deposition (CVD) and pulsed laser deposition (PLD), respectively as discussed by the authors.