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Xinchun Lu
Researcher at Tsinghua University
Publications - 169
Citations - 2338
Xinchun Lu is an academic researcher from Tsinghua University. The author has contributed to research in topics: Chemical-mechanical planarization & Polishing. The author has an hindex of 24, co-authored 144 publications receiving 1900 citations.
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Journal ArticleDOI
Atomic insight into tribochemical wear mechanism of silicon at the Si/SiO 2 interface in aqueous environment: Molecular dynamics simulations using ReaxFF reactive force field
Jialin Wen,Tianbao Ma,Weiwei Zhang,George M. Psofogiannakis,Adri C. T. van Duin,Lei Chen,Linmao Qian,Yuanzhong Hu,Xinchun Lu +8 more
TL;DR: In this article, the atomic mechanism of tribochemical wear of silicon at the Si/SiO2 interface in aqueous environment was investigated using ReaxFF molecular dynamics (MD) simulations.
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Tribochemistry and superlubricity induced by hydrogen ions.
TL;DR: It was reported that the hydrogen ions in aqueous solution played an important role in tribochemistry in running-in process (friction reducing process), which could result in the friction coefficient reducing from 0.4 to 0.04 between Si(3)N(4) and glass surfaces at macroscale.
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Film Thickness of Ionic Liquids Under High Contact Pressures as a Function of Alkyl Chain Length
TL;DR: In this article, the authors measured the film thickness of ionic liquids and silicone oils at high pressure up to 3 GPa using the relative optical interference intensity (RII) method.
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Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles; pad and sapphire substrate during chemical mechanical polishing (CMP)
TL;DR: In this paper, an ultrasonic flexural vibration assisted chemical mechanical polishing (UFV-CMP) was used for sapphire substrate CMP, and the results showed that the actions of the ultrasonic and silica abrasive particles were the main factors in the SA material removal rate and the chemical additives were helpful to decrease the roughness of SA.
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Monoatomic layer removal mechanism in chemical mechanical polishing process: A molecular dynamics study
TL;DR: In this article, the authors used molecular dynamics simulations of nanoscratching processes to study the atomic-scale removal mechanism of single crystalline silicon in chemical mechanical polishing (CMP) process and particular attention was paid to the effect of scratching depth.