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Xinling Tang
Researcher at State Grid Corporation of China
Publications - 21
Citations - 52
Xinling Tang is an academic researcher from State Grid Corporation of China. The author has contributed to research in topics: Engineering & Insulated-gate bipolar transistor. The author has an hindex of 2, co-authored 5 publications receiving 9 citations.
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Streamer characteristics of PEEK surface in nitrogen driven by positive repetitive pulse voltage
TL;DR: In this paper, a detailed analysis on the observed streamer characteristics of PEEK (polyetheretherketone) surface in nitrogen at atmospheric pressure driven by positive repetitive pulse voltage was presented.
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The Effect of the Surface Roughness Characteristics of the Contact Interface on the Thermal Contact Resistance of the PP-IGBT Module
Tong An,Zezheng Li,Yakun Zhang,Fei Qi,Liang Wang,Zhongkang Lin,Xinling Tang,Yanwei Dai,Yanpeng Gong,Pei Chen +9 more
TL;DR: In this article , the correlation between the thermal contact resistance and surface roughness characteristics of the contact interface in the press-pack insulated-gate bipolar transistor (PP-IGBT) modules during power cycling was studied by experimental measurements and finite-element (FE) simulation-based factorial design analysis.
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Effect of bubble flow on partial discharge under non-uniform AC electric fields in FC-72
TL;DR: In this article, the authors investigated the impact of the boil-induced bubble flow on the partial discharge (PD) and found that the heat induced fluid affects the density of dielectric liquid and ionization coefficient of the discharge environment, which reduces PD frequency.
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Packaging Design of 15 kV SiC Power Devices With High-Voltage Encapsulation
TL;DR: In this paper , the authors proposed a high-voltage packaging method for >15-kV SiC power devices by designing an optimized stacked direct bond copper (DBC) substrate with a copper ring and a field-dependent conductivity (FDC) encapsulation using SiC as the filler.
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Electromagnetic Disturbance Characteristics and Influence Factors of PETT Oscillation in High-Voltage IGBT Devices
TL;DR: In this article, the detailed characteristics of PETT oscillation, i.e., oscillation frequency, duration time, and oscillation peak, in high-voltage IGBT devices are systematically investigated by experiments.