Yanwei Dai

TL;DR: In this paper, an analytical model is developed to predict the SSD depth in silicon wafer due to self-rotating grinding process, which can reveal the relationship among SSD depth and the grinding parameters, the size of the abrasive grains and the radial distance from the wafer center.

TL;DR: In this article, an electrical four-point probe method was used to examine the change in the electrical parameter (resistance) of the Al metallization layer in the IGBT modules.

TL;DR: In this paper, an improved analytical solution is proposed for crack tip plastic zone size, which is corrected with relative error analyses, then its application range is determined, and the results show that the T-stresses are affected by plate thickness, crack length as well as stiffener size, location and integrity.

TL;DR: In this article, a lifetime prediction method for IGBT was proposed, in which the self-accelerating effect of bond wire damage on the lifetime was considered by using the feedback from the collector-emitter ON-resistance degradation into the power loss model.

TL;DR: In this paper, the effect of silicon anisotropy on the crack driving force, e.g., energy release rate (ERR), is discussed thoroughly by considering different crack depths, aspect ratios as well as heating and cooling effects in typical TSV under three dimensional (3D) conditions.