Xinlu Li

TL;DR: This work investigates the spin-dependent electronic transport across vdW magnetic tunnel junctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a graphene or hexagonal boron nitride (h-BN) spacer layer and finds that the junction resistance changes by thousands of percent when the magnetization of the electrodes is switched from parallel to antiparallel.

TL;DR: This work explores spin-dependent transport properties of van der Waals MFTJs which consist of two-dimensional ferromagnetic FenGeTe2 electrodes and 2D ferroelectric In2Se3 barrier layers and finds a remarkably low RA product (less than 1 Ω·μm2) which makes the proposed vdW MFTJs superior to the conventional MFTJs in terms of their promise for nonvolatile memory applications.

TL;DR: In this paper , the spin-dependent transport across single and double boron pair doped 7AGNRs by constructing lateral graphene nanoribbon heterojunctions has been investigated by using first-principles calculations.

TL;DR: In this article, the spin-orbit coupling effect on transport and anisotropy magnetoresistance (AMR) has also been investigated in a full van der Waals (vdW) GMR with the structure of Fe3GeTe2/trilayer-PdTe 2/Fe3GTe2 CPP GMR.

TL;DR: In this article , the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJ) with structure of Fe 3GaTe 2/insulator/Fe3 GaTe2 by using first-principles calculations.